Results 191 to 200 of about 9,001 (256)

Design of a High Coupling SAW Resonator Based on an Al/41° Y-X LiNbO₃/SiO₂/poly-Si/Si Structure for Wideband Filter. [PDF]

Micromachines (Basel)
Wang X, Chang Y, Zhang Q, Liu L, Wang X, Wu H.   +5 more
europepmc   +1 more source

SV-SAW RF filters based on low-cost 128°Y LiNbO₃/SiO₂/poly-Si/Si substrate for 6G cmWave wireless communications. [PDF]

Microsyst Nanoeng
Yang K, Chen J, Wang J, Lin F, Fang J, Li M, Zheng J, Ren Z, Qian F, Sun H, Yang Y, Zuo C.   +11 more
europepmc   +1 more source

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Film bulk acoustic resonator

The Journal of the Acoustical Society of America, 2006
A film bulk acoustic resonator is fabricated in the following manner. First, a base layer is formed on an insulating substrate. Then, a resonator assembly is formed on the base layer. The resonator assembly includes a first electrode held in contact with the base layer, a second electrode, and a piezoelectric layer held between the first and the second
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4.2 GHz LiNbO₃ Film Bulk Acoustic Resonator

2021 IEEE International Ultrasonics Symposium (IUS), 2021
We have designed and fabricated LiNbO 3 Film Bulk Acoustic Resonators operating around 4.2 GHz, suitable for C-band filters, with various bandwidths (60, 170, 300 and 500 MHz). They are based on common crystal cuts suitable for the excitation of longitudinal waves (Z, Y+64° and Y+36°cuts) and of shear waves (Y+163°-cut).
Bousquet, Marie, Perreau, Pierre, Joulie, Alice, Delaguillaumie, Fanny, Maeder-Pachurka, Catherine, Castellan, Gael, Envedi, Gregory, Delprato, Julien, Mazen, Frederic, Reinhardt, Alexandre, Huyet, Isabelle, Laroche, Thierry, Clairet, Alexandre, Ballandras, Sylvain   +13 more
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Film bulk acoustic wave resonator technology

IEEE Symposium on Ultrasonics, 2002
It is demonstrated that completely monolithic two-pole filters can be fabricated on silicon substrates using FBARs (film bulk acoustic resonators) and that these filters have low loss and reasonable bandwidth. A two-pole monolithic ladder filter operating in the 1-1.5 GHz range has been demonstrated.
S.V. Krishnaswamy, J. Rosenbaum, S. Horwitz, C. Vale, R.A. Moore   +4 more
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Application of film bulk acoustic resonators

1992 IEEE Microwave Symposium Digest MTT-S, 2003
Multipole film bulk acoustic resonator (FBAR) bandpass filters are being designed and fabricated on various substrates, including silicon and GaAs. Capable performance has been demonstrated for the large number of system insertions within the low microwave (1-3 GHz) range.
S. Horwitz, C. Milton
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Micromachined thin film bulk acoustic resonators

Proceedings of IEEE 48th Annual Symposium on Frequency Control, 2002
We have fabricated thin film bulk acoustic resonators (FBARS) with measured Q's of over 1000 and resonant frequencies as low as 1.5 GHz and as high as 7.5 GHz. The device, as currently fabricated, consists of the piezoelectric material aluminum nitride (AlN) sandwiched between electrodes all of which lie on a thin low-stress silicon nitride (Si/sub x/N/
R. Ruby, P. Merchant
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LiNbO₃ Film Bulk Acoustic Resonator for n79 band

2022 IEEE International Ultrasonics Symposium (IUS), 2022
Background, Motivation and Objective Thin film Bulk Acoustic Wave (BAW) resonators based on lithium niobate (LiNbO3) exploiting a longitudinal polarization have been proposed as promising candidates for wide bandwidth filters in the 3 - 6 GHz range [1, 2].
Bousquet, Marie, Borel, Emma, Perreau, Pierre, Soulat, Elisa, Delaguillaumie, Fanny, Castellan, Gaël, Enyedi, Grégory, Delprato, Julien, Reinhardt, Alexandre, Joulie, Alice, Maeder-Pachurka, Catherine   +10 more
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