Results 201 to 210 of about 9,001 (256)
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Electromagnetic modeling of thin-film bulk acoustic resonators

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), 2004
This paper introduces a novel technique for the electromagnetic analysis of thin-film bulk acoustic-wave resonators. The piezoelectric/acoustic linear equations are coupled to and solved together with Maxwell's equations. For the acoustic propagation, locally monodimensional behavior is assumed, while full-wave three-dimensional Maxwell's equations are
M. Farina, T. Rozzi
openaire   +1 more source

Beam-supported AlN thin film bulk acoustic resonators

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2006
A novel, suspended thin film bulk acoustic wave resonator (SFBAR) has been fabricated from an aluminum nitride film sputtered directly on a (100) silicon substrate. The suspended membrane design uses thin beams to support, as well as electrically connect, the resonator and has been fabricated using both thin film processing and bulk silicon ...
Callaghan, Lori A   +3 more
openaire   +3 more sources

Film Bulk Acoustic Resonator using High-Acoustic-Impedance Electrodes

Japanese Journal of Applied Physics, 2007
A bulk acoustic wave filter composed of piezoelectric thin-film resonators has many features superior to those of other small filters such as a surface acoustic wave (SAW) filter and a ceramic filter. A high-Q factor and low loss are big advantages for a film bulk acoustic resonator (FBAR).
Masanori Ueda   +6 more
openaire   +1 more source

Frequency tuning of film bulk acoustic resonators

SPIE Proceedings, 2006
This paper suggests a design for a Film Bulk Acoustic Resonator (FBAR) which utilizes a secondary piezoelectric layer for purposes of tuning the FBAR's resonant frequency. Currently, many ceramic resonators have difficulties in on-chip integration, power handling and electrode fabrication.
Amanda A. Frederick   +2 more
openaire   +1 more source

Recent developments of film bulk acoustic resonators

Functional Materials Letters, 2016
Film bulk acoustic wave resonator (FBAR) experienced skyrocketing development in the past 15 years, owing to the explosive development of mobile communication. It stands out in acoustic filters mainly because of high quality factor, which enables low insertion loss and sharp roll off. Except for the massive application in wireless communication, FBARs
Junning Gao   +3 more
openaire   +1 more source

Film bulk acoustic resonator and filter circuit including a plurality of film bulk acoustic resonators

The Journal of the Acoustical Society of America, 2007
A film bulk acoustic resonator includes a first electrode, a piezoelectric film disposed on the first electrode, a second electrode disposed on the piezoelectric film or disposed above the piezoelectric film, and an additional film disposed on and abutting the piezoelectric film. The additional film has at least one pair of opposite sides which are non-
openaire   +1 more source

Magnetoelectric GaN film bulk acoustic wave resonator

2019 IEEE Asia-Pacific Microwave Conference (APMC), 2019
This paper presents a novel magnetoelectric GaN film bulk acoustic resonator (FBAR). The device integrates a 750 nm piezoelectric GaN layer with Molybdenum electrodes with a magnetostrictive Nickel layer, separated by 50 nm of silicon nitride. The FBAR is fabricated on a 1.2 × 1.2 mm2GaN membrane released by micromachining of a high-resistivity silicon
Alina-Cristina Bunea   +5 more
openaire   +1 more source

Thin film bulk acoustic wave resonator

The Journal of the Acoustical Society of America, 2005
The present invention is intended to provide a thin film bulk acoustic wave resonator, which has a resonant excitation portion free from damage caused by etching, a high electromechanical coupling coefficient k t 2 and a high quality coefficient Q value, and to provide a thin film bulk acoustic wave resonator having a plurality of different resonant
openaire   +1 more source

Infrared Detection Using Film Bulk Acoustic Resonators

Micro and Nanosystemse, 2011
This paper described an infrared (IR) radiation sensor based on Film Bulk Acoustic Resonator (FBAR). The resonant frequency of the FBAR decreased linearly when there was IR (peak wavelength at 780 nm) illumination on the device. The sensing mechanism was attributed to the temperature-dependent Young's modulus of the resonator material (ZnO), which ...
Wang, Ziyu   +3 more
openaire   +2 more sources

Transparent thin film bulk acoustic wave resonators

2016 European Frequency and Time Forum (EFTF), 2016
Transparent electronic devices have interesting applications in a wide range of fields, such as wearables, intelligent windows, new concepts of smartphones and sensors. In this work we present fully transparent AlN-based thin film bulk acoustic wave solidly mounted resonators. We have used indium-tin oxide as the transparent material for the electrodes
Mario DeMiguel-Ramos   +7 more
openaire   +1 more source

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