Results 131 to 140 of about 316 (158)
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IEEE Sensors Journal, 2009
Analytical and finite-element models of a localized-mass sensor fabricated with thin-film bulk acoustic wave resonator (FBAR) are reported. While our group demonstrated FBAR-based localized-mass sensors, no previous modeling of these sensors is found in the literature.
Humberto Campanella +4 more
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Analytical and finite-element models of a localized-mass sensor fabricated with thin-film bulk acoustic wave resonator (FBAR) are reported. While our group demonstrated FBAR-based localized-mass sensors, no previous modeling of these sensors is found in the literature.
Humberto Campanella +4 more
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Thin film bulk wave acoustic resonators (FBAR) based filters
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843), 2004The advantages, constructions, materials for production of FBAR are analyzed. Active schemes of filters based on FBAR are proposed, and the results of modeling of active piezoelectric filters are discussed.
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Polymer coated film bulk acoustic resonator (FBAR) arrays for Indoor Air Quality (IAQ) monitoring
2015 IEEE SENSORS, 2015In this work we present a miniaturized electronic nose (E-Nose) sensor platform made by integrating film bulk acoustic resonators (FBARs) with arrays of CMOS oscillators. Each of the FBARs in the array is chemically activated to differing vapors (odors) after depositing a variety of polymers on the active areas of the resonators.
null Si Hoon Lee +5 more
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Microelectronic Engineering, 2009
High-frequency technologies and fabrication processes intended for inertial force detection have been developed. The sensing devices are based on longitudinal-mode thin-film bulk acoustic wave resonators (FBAR) monolithically integrated with silicon (Si) technologies.
Humberto Campanella +2 more
exaly +2 more sources
High-frequency technologies and fabrication processes intended for inertial force detection have been developed. The sensing devices are based on longitudinal-mode thin-film bulk acoustic wave resonators (FBAR) monolithically integrated with silicon (Si) technologies.
Humberto Campanella +2 more
exaly +2 more sources
2006 International Conference of the IEEE Engineering in Medicine and Biology Society, 2006
Lateral field excitation (LFE) of a thin film bulk acoustic resonator (FBAR) is an ideal platform for biomedical sensors. A thickness shear mode (TSM) acoustic wave in a piezoelectric thin film is desirable for probing liquid samples because of the poor coupling of shear waves into the liquid.
Anthony Dickherber +2 more
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Lateral field excitation (LFE) of a thin film bulk acoustic resonator (FBAR) is an ideal platform for biomedical sensors. A thickness shear mode (TSM) acoustic wave in a piezoelectric thin film is desirable for probing liquid samples because of the poor coupling of shear waves into the liquid.
Anthony Dickherber +2 more
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A Film Bulk Acoustic Resonator (FBAR) L Band Low Noise Oscillator for Digital Communications
32nd European Microwave Conference, 2002, 2002This paper describes the design and measured performance of a low-noise L band oscillator based on Agilent's Film Bulk Acoustic Resonator (FBAR) for applications in digital communication systems. This experimental oscillator demonstrated at 1951 MHz with a phase noise of - 115 dBc/Hz at 10KHz from the carrier represents the first example of a low noise
A.P.S. Khanna +6 more
exaly +2 more sources
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2010
In this paper, we present the analytical study of thin film bulk acoustic wave resonators (FBARs) using ZnO and AlN films with a c-axis tilt angle (off-normal) from 0 degrees to 180 degrees. The tilted c-axis orientation induces normal plane and inplane polarizations, which leads to the coexistence of the longitudinal mode and shear mode in the ...
Lifeng, Qin +3 more
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In this paper, we present the analytical study of thin film bulk acoustic wave resonators (FBARs) using ZnO and AlN films with a c-axis tilt angle (off-normal) from 0 degrees to 180 degrees. The tilted c-axis orientation induces normal plane and inplane polarizations, which leads to the coexistence of the longitudinal mode and shear mode in the ...
Lifeng, Qin +3 more
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Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003., 2004
The fundamentals of bulk-acoustic-wave (BAW) devices and the performance of state-of-the-art film bulk-acoustic-resonator (FBAR) filters is reviewed. The key role that high performance RF-filters play in handset applications is discussed and the benefit of silicon technologies outlined. Key processes in manufacturing of FBARs are briefly reviewed.
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The fundamentals of bulk-acoustic-wave (BAW) devices and the performance of state-of-the-art film bulk-acoustic-resonator (FBAR) filters is reviewed. The key role that high performance RF-filters play in handset applications is discussed and the benefit of silicon technologies outlined. Key processes in manufacturing of FBARs are briefly reviewed.
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Advanced Materials Research, 2011
This paper reports a dual-mode film bulk acoustic resonator (FBAR) device combined with Au/Cr layer to construct a liquid sensor. In order to obtain a liquid sensor with high sensitivity, the dual-mode FBAR with piezoelectric layer of ZnO thin film has been investigated.
Wei Tsai Chang +6 more
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This paper reports a dual-mode film bulk acoustic resonator (FBAR) device combined with Au/Cr layer to construct a liquid sensor. In order to obtain a liquid sensor with high sensitivity, the dual-mode FBAR with piezoelectric layer of ZnO thin film has been investigated.
Wei Tsai Chang +6 more
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2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2013
In this paper, a series resonant converter and a LED driver have been implemented by using a film bulk acoustic resonators (FBAR) in place of the inductor. This MEMS device can offer very high inductance density with excellent Q factor and can be conveniently fabricated in a CMOS compatible process.
Abusaleh M. Imtiaz, Faisal H. Khan
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In this paper, a series resonant converter and a LED driver have been implemented by using a film bulk acoustic resonators (FBAR) in place of the inductor. This MEMS device can offer very high inductance density with excellent Q factor and can be conveniently fabricated in a CMOS compatible process.
Abusaleh M. Imtiaz, Faisal H. Khan
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