Results 171 to 180 of about 1,189 (200)
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Microelectronic Engineering, 2009
High-frequency technologies and fabrication processes intended for inertial force detection have been developed. The sensing devices are based on longitudinal-mode thin-film bulk acoustic wave resonators (FBAR) monolithically integrated with silicon (Si) technologies.
Humberto Campanella +4 more
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High-frequency technologies and fabrication processes intended for inertial force detection have been developed. The sensing devices are based on longitudinal-mode thin-film bulk acoustic wave resonators (FBAR) monolithically integrated with silicon (Si) technologies.
Humberto Campanella +4 more
openaire +1 more source
2006 International Conference of the IEEE Engineering in Medicine and Biology Society, 2006
Lateral field excitation (LFE) of a thin film bulk acoustic resonator (FBAR) is an ideal platform for biomedical sensors. A thickness shear mode (TSM) acoustic wave in a piezoelectric thin film is desirable for probing liquid samples because of the poor coupling of shear waves into the liquid.
Anthony, Dickherber +2 more
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Lateral field excitation (LFE) of a thin film bulk acoustic resonator (FBAR) is an ideal platform for biomedical sensors. A thickness shear mode (TSM) acoustic wave in a piezoelectric thin film is desirable for probing liquid samples because of the poor coupling of shear waves into the liquid.
Anthony, Dickherber +2 more
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IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2010
In this paper, we present the analytical study of thin film bulk acoustic wave resonators (FBARs) using ZnO and AlN films with a c-axis tilt angle (off-normal) from 0 degrees to 180 degrees. The tilted c-axis orientation induces normal plane and inplane polarizations, which leads to the coexistence of the longitudinal mode and shear mode in the ...
Lifeng, Qin +3 more
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In this paper, we present the analytical study of thin film bulk acoustic wave resonators (FBARs) using ZnO and AlN films with a c-axis tilt angle (off-normal) from 0 degrees to 180 degrees. The tilted c-axis orientation induces normal plane and inplane polarizations, which leads to the coexistence of the longitudinal mode and shear mode in the ...
Lifeng, Qin +3 more
openaire +2 more sources
Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003., 2004
The fundamentals of bulk-acoustic-wave (BAW) devices and the performance of state-of-the-art film bulk-acoustic-resonator (FBAR) filters is reviewed. The key role that high performance RF-filters play in handset applications is discussed and the benefit of silicon technologies outlined. Key processes in manufacturing of FBARs are briefly reviewed.
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The fundamentals of bulk-acoustic-wave (BAW) devices and the performance of state-of-the-art film bulk-acoustic-resonator (FBAR) filters is reviewed. The key role that high performance RF-filters play in handset applications is discussed and the benefit of silicon technologies outlined. Key processes in manufacturing of FBARs are briefly reviewed.
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2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2013
In this paper, a series resonant converter and a LED driver have been implemented by using a film bulk acoustic resonators (FBAR) in place of the inductor. This MEMS device can offer very high inductance density with excellent Q factor and can be conveniently fabricated in a CMOS compatible process.
Abusaleh M. Imtiaz, Faisal H. Khan
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In this paper, a series resonant converter and a LED driver have been implemented by using a film bulk acoustic resonators (FBAR) in place of the inductor. This MEMS device can offer very high inductance density with excellent Q factor and can be conveniently fabricated in a CMOS compatible process.
Abusaleh M. Imtiaz, Faisal H. Khan
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Design and modelling of thin film bulk acoustic resonator (FBAR) for RF application
Materials Today: Proceedings, 2023P.K. Joshi +5 more
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Design of a FBAR (Film Bulk Acoustic Resonator) Oscillator at 1.6 GHz
Micro and Nanosystemse, 2011Xu Zhang, Wencheng Xu, Junseok Chae
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A 3.4–3.6 GHz High-Selectivity Filter Chip Based on Film Bulk Acoustic Resonator Technology
Electronics (Switzerland), 2023Yongle Wu, Wei Min Wang
exaly
2010
Abstract : Thin film bulk acoustic wave resonators (FBAR) using piezoelectric AlN, ZnO and GaN thin films have attracted extensive research activities in the past years. Highly c-axis oriented (normal-plane orientation) binary semiconductor piezoelectric thin films are particularly investigated for resonators operating at the fundamental thickness ...
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Abstract : Thin film bulk acoustic wave resonators (FBAR) using piezoelectric AlN, ZnO and GaN thin films have attracted extensive research activities in the past years. Highly c-axis oriented (normal-plane orientation) binary semiconductor piezoelectric thin films are particularly investigated for resonators operating at the fundamental thickness ...
openaire +1 more source