Results 111 to 120 of about 2,060,378 (305)
Advanced Science, EarlyView.Our work reports that Li⁺ doping in CuInP2S₆ induces coexistence of high‐ and low‐polarization states, which fosters a rich spectrum of topological polar textures, such as bubbles and labyrinth domains. An unconventional flexoelectric effect is also discovered, where strain gradients can mechanically manipulate these polarization states and their ...
Lei Gao +12 more
wiley +1 more source
Design Consideration of Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope
IEEE Journal of the Electron Devices Society, 2016 Effect of design parameters including device geometry, doping, and bias on key performance is investigated in a diode-type NAND flash memory cell string working under positive feedback (PF) mechanism. The string has a tube-type poly-Si channel, n+ and p+
Nag Yong Choi +3 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta +9 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source
Interplay Between Structure and Interfacial Interactions in Fe‐Gd Synthetic Ferrimagnets
Advanced Electronic Materials, EarlyView.Synthetic ferrimagnets with nearly identical Gd–Fe compositions but different architectures and crystallinity were investigated by element‐resolved microscopy, structural analysis and atomistic spin simulations. The results show that Curie temperature and domain evolution are governed primarily by structural order and interface quality, demonstrating ...
Álvaro González‐García +10 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Coercive voltage enhancement in hafnia‐based ferroelectric–dielectric heterostructures is shown to originate from leakage‐governed voltage division between the ferroelectric and dielectric layers. Through experiments, circuit modeling, and defect‐based simulations, a universal framework is established to engineer large memory windows without altering ...
Prasanna Venkatesan +21 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos +4 more
wiley +1 more source
EngIn order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim +2 more
doaj +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Advanced Energy and Sustainability Research, EarlyView.Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar +2 more
wiley +1 more source