Effects of ion beams on flash memory cells [PDF]
This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation ...
Obrenović Marija D. +3 more
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Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer. [PDF]
Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the semiconductor electronics market today. It is challenging to create intrinsic traps in the dielectric layer without high temperature processing steps.
Mondal S, Venkataraman V.
europepmc +3 more sources
This paper focuses on the NAND flash memory as a data storage medium in the Internet of things data acquisition system, which plays an important role from beginning to end.
Zhuo Hou +3 more
doaj +1 more source
Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices
NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits
Seung-Ho Lim, Ki-Woong Park
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Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters
Operation of modern flash memory elements is based on electron transport processes in the channel of silicon MOSFETs with floating gate. The aim of this work was calculation of electron mobility and study of the influence of phonon and ionized impurity ...
O. G. Zhevnyak +3 more
doaj +1 more source
Toward Low-Power Flash Memory: Prospect of Adopting Crystalline Oxide as Charge Trapping Layer
The rapid growth of data center, ubiquitous cloud computing, and mobile gadgets has made flash memory one of the major semiconductor markets. The booming request of flash memory has not only brought substantial economic and societal benefit but led to ...
Kuen-Yi Chen +3 more
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An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory
Flash memory-based computing-in-memory (CIM) architectures have gained popularity due to their remarkable performance in various computation tasks of data processing, including machine learning, neuron networks, and scientific calculations. Especially in
Yueran Qi +10 more
doaj +1 more source
Efficient Design of Read Voltages and LDPC Codes in NAND Flash Memory Using Density Evolution
Low-density parity-check (LDPC) codes play an important role in the reliability enhancement of commercial NAND flash memory. Unfortunately, due to the requirement of the reading speed of NAND flash memory, the LDPC decoder will not obtain precise soft ...
Chatuporn Duangthong +2 more
doaj +1 more source
Architecture and Process Integration Overview of 3D NAND Flash Technologies
In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties.
Geun Ho Lee +3 more
doaj +1 more source
Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State Drives [PDF]
NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades.
Yu Cai +4 more
semanticscholar +1 more source

