Results 61 to 70 of about 2,060,378 (305)

Intermolecular Interactions as Driving Force of Increasing Multiphoton Absorption in a Perylene Diimide‐Based Coordination Polymer

open access: yesAdvanced Functional Materials, EarlyView.
This study uncovers the unexplored role of intermolecular interactions in multiphoton absorption in coordination polymers. By analyzing [Zn2tpda(DMA)2(DMF)0.3], it shows how the electronic coupling of the chromophores and confinement in the MOF enhance two‐and three‐photon absorption.
Simon Nicolas Deger   +11 more
wiley   +1 more source

Exploring Design Dimensions in Flash-based Mass-memory Devices [PDF]

open access: yes, 2009
Mission-critical space system applications present several issues: a typical one is the design of a mass-memory device (i.e., a solid- state recorder).
Caramia, M.   +3 more
core  

Flash storage memory [PDF]

open access: yesCommunications of the ACM, 2008
Can flash memory become the foundation for a new tier in the storage hierarchy?
openaire   +1 more source

Unleashing the Power of Machine Learning in Nanomedicine Formulation Development

open access: yesAdvanced Functional Materials, EarlyView.
A random forest machine learning model is able to make predictions on nanoparticle attributes of different nanomedicines (i.e. lipid nanoparticles, liposomes, or PLGA nanoparticles) based on microfluidic formulation parameters. Machine learning models are based on a database of nanoparticle formulations, and models are able to generate unique solutions
Thomas L. Moore   +7 more
wiley   +1 more source

Physics-Based SPICE-Compatible Compact Model of FLASH Memory With Poly-Si Channel for Computing-in-Memory Applications

open access: yesIEEE Journal of the Electron Devices Society
Recently, three-dimensional FLASH memory with multi-level cell characteristics has attracted increasing attention to enhance the capabilities of artificial intelligence (AI) by leveraging computingin-memory (CIM) systems.
Jung Rae Cho   +9 more
doaj   +1 more source

Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications [PDF]

open access: yes, 2013
BaTi03 with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTi03 CTL, the one with Hf-doped BaTi03 shows better performance in terms of higher program speed and ...
Huang, X, Lai, PT
core   +1 more source

Complex Cryptographic and User‐Centric Physically Unclonable Functions Enabled by Strain‐Sensitive Nanocrystals via Selective Ligand Exchange

open access: yesAdvanced Functional Materials, EarlyView.
This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim   +7 more
wiley   +1 more source

Exploiting Two‐Photon Lithography, Deposition, and Processing to Realize Complex 3D Magnetic Nanostructures

open access: yesAdvanced Functional Materials, EarlyView.
Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey   +5 more
wiley   +1 more source

Flash-memories in Space Applications: Trends and Challenges [PDF]

open access: yes, 2009
Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M.   +3 more
core  

RBER-Aware Lifetime Prediction Scheme for 3D-TLC NAND Flash Memory

open access: yesIEEE Access, 2019
NAND flash memory is widely used in various computing systems. However, flash blocks can sustain only a limited number of program/erase (P/E) cycles, which are referred to as the endurance.
Ruixiang Ma   +5 more
semanticscholar   +1 more source

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