Results 231 to 240 of about 20,361 (264)
Some of the next articles are maybe not open access.
2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2017
Commercially available light emitting diodes (LEDs) that have high efficiencies and long lifetime are offered in advanced packaging technologies. Many cooling systems were developed for current LED systems that enable a better removal of heat than counterpart devices offered earlier this decade.
Muslu, Ahmet Mete +3 more
openaire +1 more source
Commercially available light emitting diodes (LEDs) that have high efficiencies and long lifetime are offered in advanced packaging technologies. Many cooling systems were developed for current LED systems that enable a better removal of heat than counterpart devices offered earlier this decade.
Muslu, Ahmet Mete +3 more
openaire +1 more source
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics, 2002
A new 550 V AlGaAs/GaAs Hetero source Bipolar mode Static Induction Transistor (HBSIT) has recently been developed and fabricated. The GaAs HBSIT is considered to be superior to conventional Silicon power devices in on-state characteristics. For an example, forward voltage drop of 0.3 V can be obtained at current gain of 150 and drain current density ...
K. Nonaka +4 more
openaire +1 more source
A new 550 V AlGaAs/GaAs Hetero source Bipolar mode Static Induction Transistor (HBSIT) has recently been developed and fabricated. The GaAs HBSIT is considered to be superior to conventional Silicon power devices in on-state characteristics. For an example, forward voltage drop of 0.3 V can be obtained at current gain of 150 and drain current density ...
K. Nonaka +4 more
openaire +1 more source
Materials Science Forum, 2006
For SiC devices capable of blocking very high voltages (>4kV), it becomes imperative to use bipolar devices because of unacceptably large on-state losses of unipolar devices. The IGBT offers the potential for high current density operation and ease of turn off using a MOS gate structure.
Lin Zhu, T. Paul Chow
openaire +1 more source
For SiC devices capable of blocking very high voltages (>4kV), it becomes imperative to use bipolar devices because of unacceptably large on-state losses of unipolar devices. The IGBT offers the potential for high current density operation and ease of turn off using a MOS gate structure.
Lin Zhu, T. Paul Chow
openaire +1 more source
38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003., 2004
The direct torque control (DTC) scheme is a new control scheme based on space vector theory. However, at low speed, the performance is not very good. The effect of forward voltage drop on DTC performance at low speed is analyzed and compensated in this paper. Modeling results show that the blindness to the forward voltage drop of the power switches may
null Lixin Tang, M.F. Rahman
openaire +1 more source
The direct torque control (DTC) scheme is a new control scheme based on space vector theory. However, at low speed, the performance is not very good. The effect of forward voltage drop on DTC performance at low speed is analyzed and compensated in this paper. Modeling results show that the blindness to the forward voltage drop of the power switches may
null Lixin Tang, M.F. Rahman
openaire +1 more source
2007 7th Internatonal Conference on Power Electronics, 2007
The performance of direct torque control (DTC) interior permanent magnet (IPM) machines at low speed is poor due to a few reasons, namely limited accuracy of stator voltage acquisition and the presence of offset and drift components in the acquired signals.
Saad Sayeef, M. F. Rahman
openaire +1 more source
The performance of direct torque control (DTC) interior permanent magnet (IPM) machines at low speed is poor due to a few reasons, namely limited accuracy of stator voltage acquisition and the presence of offset and drift components in the acquired signals.
Saad Sayeef, M. F. Rahman
openaire +1 more source
Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154), 2002
This paper provides a concise overview of the impact of new ultra low RDS(on) MOSFET technology, low V/sub f/ Schottky technology, and low V/sub ce(on)/ bipolar technology devices as applied to control of low voltage DC power. Device selection criteria and circuit topologies are provided along with empirical and FEA modeling data on heat sinking and ...
L. Mays, K. Kime
openaire +1 more source
This paper provides a concise overview of the impact of new ultra low RDS(on) MOSFET technology, low V/sub f/ Schottky technology, and low V/sub ce(on)/ bipolar technology devices as applied to control of low voltage DC power. Device selection criteria and circuit topologies are provided along with empirical and FEA modeling data on heat sinking and ...
L. Mays, K. Kime
openaire +1 more source
FORWARD VOLTAGE DROP MEASUREMENTS IN PSEUDOSPARK SWITCHES
Ninth IEEE International Pulsed Power Conference, 1993K. Frank +6 more
openaire +1 more source
Precision measurement of forward voltage drop of semiconductor power rectifiers
Measurement Techniques, 1979V. M. Bardin +2 more
openaire +1 more source
6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop
Materials Science Forum, 2000Yoshitaka Sugawara +3 more
openaire +1 more source