Results 101 to 110 of about 211,716 (291)

Machine Learning for Designing Perovskites and Perovskite‐Inspired Solar Materials: Emerging Opportunities and Challenges

Advanced Science, EarlyView.
This review offers a comprehensive comparison between perovskites and perovskite‐inspired materials (PIMs), focusing on their crystal structures, electronic properties, and chemical compositions. It evaluates the applicability of machine learning (ML) descriptors and models across both material classes.
Yangfan Zhang, Yiming Xia, Ali Shakiba, Hongrui Zhang, Xiaojing Hao, Priyank V. Kumar, Mahesh P. Suryawanshi   +6 more
wiley   +1 more source

Four-channel GaAs multifunction chips with bottom RF interface for Ka-band SATCOM antennas

ETRI Journal
Receiver and transmitter monolithic microwave integrated circuit (MMIC) multifunction chips (MFCs) for active phased-array antennas for Ka-band satellite communication (SATCOM) terminals have been designed and fabricated using a 0.15-μm GaAs ...
Jin-Cheol Jeong, Junhan Lim, Dong-Pil Chang   +2 more
doaj   +1 more source

Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells [PDF]

The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions.
Hart, R. E., Jr., Swartz, C. K., Weinberg, I.   +2 more
core   +1 more source

As vacancies, Ga antisites and Au impurities in Zincblende and Wurtzite GaAs nanowire segments from first principles

, 2013
In this paper some specific issues related to point defects in GaAs nanowires are addressed with the help of density functional theory calculations. These issues mainly arise from the growth of nanowires under conditions different from those used for ...
Du, Yaojun A., Kratzer, Peter, Sakong, Sung   +2 more
core   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs

, 1998
The observation of a carrier-density driven metal-insulator transition in n-type GaAs-based heterostructure is reported. Although weaker than in comparable-quality p-type GaAs samples, the main features of the transition are rather similar.Comment: 3 ...
A. M. Finkel’stein, C. C. Li, C. Castellani, D. C. Tsui, D. J. Bishop, D. Popovic, D. Shahar, D. Shahar, E. Abrahams, Hadas Shtrikman, J. Lam, J. Yoon, L. Pavesi, L. W. Wong, M. J. Uren, M. Y. Simmons, P. A. Lee, P. Phillips, P. T. Coleridge, S. He, S. J. Papadakis, S. V. Kravchenko, S. V. Kravchenko, S. V. Kravchenko, V. Dobrosavljevic, V. M. Pudalov, W. I. Wang, Y. Hanein, Y. Hanein   +28 more
core   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Surface segregation and the Al problem in GaAs quantum wells

, 2018
Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped Al$_x$Ga$_{1-
Baldwin, K. W., Chung, Yoon Jang, Pfeiffer, L. N., Shayegan, M., West, K. W.   +4 more
core   +1 more source

High‐Speed Flexible Schottky Diodes Based on Carbon Nanotubes

Advanced Electronic Materials, EarlyView.
We demonstrate a flexible Schottky diode based on carbon nanotube network thin film, and the devices are fabricated via a low‐temperature process on a PI substrate, which exhibits excellent radio‐frequency characteristics, with a high responsivity 6 A/W at zero bias, a high intrinsic cut‐off frequency reaching 153 GHz, and an extrinsic cut‐off ...
Yan Li, Haoyu Zhang, Xinyi Zheng, Weifeng Wu, Xiaowei He, Li Ding, Sheng Wang   +6 more
wiley   +1 more source

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

Beilstein Journal of Nanotechnology, 2018
This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures.
Alexander S. Pashchenko, Leonid S. Lunin, Eleonora M. Danilina, Sergei N. Chebotarev   +3 more
doaj   +1 more source