Results 251 to 260 of about 211,716 (291)

Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs

Semiconductor Science and Technology, 2014
Engineered or 'virtual' substrates are of interest to extend the range of epitaxially-grown semiconductor heterostructures available for device applications. To this end, elastically strain-relaxed square features up to 30 µm in size and having an in-plane lattice constant as much as 0.49% larger than the lattice constant of GaAs were fabricated from ...
P M Mooney, K L Kavanagh, D Owen, D Lackner, B Cawston-Grant, A F Basile, O Salehzadeh, S P Watkins   +7 more
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Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs

Journal of Crystal Growth, 2007
Abstract GaAs/In x Ga 1− x As/GaAs heterostructures nanowires were grown by metal-organic vapor-phase epitaxy on (1 1 1)B GaAs substrate using the vapor–liquid–solid growth mode. The diameter of the nanowires was defined by monodisperse gold nanoparticles deposited on the GaAs substrate.
Regolin, Ingo, Sudfeld, Daniela, Lüttjohann, Stephan, Khorenko, Victor, Prost, Werner, Kästner, Jochen, Dumpich, Guenter, Meier, Cedrik, Lorke, Axel, Tegude, Franz-Josef   +9 more
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Characterization of GaAs/Si/GaAs Heterostructures

Japanese Journal of Applied Physics, 1992
GaAs/Si(n)/GaAs, n=1 to 3 mono-layers (ML) were grown on GaAs (100) substrates using molecular beam epitaxy. Double crystal X-ray diffraction rocking curve and Rutherford backscattering/chanelling studies indicated that 1 ML of Si grows coherently and psuedomorphicatly on GaAs and 2 and 3 ML Si exhibit increasing defect nature and are probably ...
T. Sudersena Rao, Yoshiji Horikoshi, C. Jagadish, R. G. Elliman, J. S. Williams   +4 more
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Photoreflectance of GaAs/SI-GaAs interface

Physica Status Solidi (a), 1993
Photoreflectance spectra of doped molecular-beam-epitaxy GaAs films grown on semi-insulating GaAs substrate, modulated by different pump beams, are studied. From the interference effect of two light beams reflected from different interfaces of a sample, the PR signals from the surface of the MBE film and that from the interface of film and substrate ...
Zhonghe Wang, Shihong Pan, Shanming Mu
openaire   +1 more source

GaAs–MnAs nanowires

physica status solidi (b), 2011
AbstractDifferent strategies for obtaining nanowires (NWs) with ferromagnetic properties using the molecular beam epitaxy (MBE) grown nanostructures combining GaAs and Mn were investigated. Four types of structures have been studied: (i) self‐catalyzed GaAs:Mn NWs grown at low temperatures on GaAs(100) substrates; (ii) GaAs:Mn NWs grown at high ...
J. Sadowski, A. Siusys, A. Kovacs, T. Kasama, R. E. Borkowski, T. Wojciechowski, A. Reszka, B. Kowalski   +7 more
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GaAs-based clusters

Physical Review B, 1992
This paper presents the results of cluster calculations performed for selected Ga- and As-based clusters: These include the GaH 3 , AsH 3 , GaAsH 6 , and Ga 2 As 2 H 10 model clusters. Ab initio calculations were performed within the restricted Hartree-Fock formalism.
, Ruda, , Ping
openaire   +2 more sources

Bonding in GaAs

Physical Review Letters, 1988
Experimental measurements of structure factors in GaAs have been compared with the results of ab initio calculations by the pseudopotential method. We measure the charge in the bond from charge-density maps to be 0.071 electron, in good agreement with theory.
, Zuo, , Spence, , O'Keeffe
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?????????????????????? ???????????????? ?????????????? ???? ?????????????? ??????????????????????????????? ?? ???????????????????????????? ???????????????????????????? ???????????????????? GaAs

2013
???????????????????????? ??????????-???????????????? ?????????? ?????????????????? ???????????????????????? ?????????????????????????? ???????????????? ?????????????? ???????????? ?????????????? ?????????????? - ?????????????????? ???? ?????????????? ???????????????????????????? ???????????????????????? ?? ?????????? ???????? ?????????? ?????????????? ?
  +8 more sources

???????????????????????????????? ?????????????????????????? GaAs, ?????????????????????? ?? ???????????????? ??????????????????????????????

2018
A comparative study of the thermal conductivity in the temperature interval 2???300 K is carried out for single-crystal GaAs samples grown on Earth and grown under analogous conditions in microgravity on the manned space station Mir. It is found that the heat transfer in the samples is due to phonons.
openaire   +4 more sources

GaAs infrared source

IEEE Transactions on Electron Devices, 1962
A diffused junction GaAs diode has been developed for use as a fast, high-efficiency, infrared source. The diode is forward biased with the light being generated by the recombination of minority carriers in the semiconductor bulk. The device is a P+-N structure with a spaced contact covering a minor portion of the N-type face of the wafer through which
J.R. Biard, E.L. Bonin, W.N. Carr, G.E. Pittman   +3 more
openaire   +1 more source