Results 191 to 200 of about 3,422 (258)

Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO₂ as a Gate Dielectric. [PDF]

Materials (Basel), 2016
Lam KY, Huang JS, Zou YJ, Lee KW, Wang YH.   +4 more
europepmc   +1 more source

Terahertz integrated sensing and mobile communications empowered by a 220-GHz-band portable device. [PDF]

Nat Commun
Wang G, Li M, Liu Q, Zang J, Li O, Du X, Xu L, Tao M, Han C.   +8 more
europepmc   +1 more source

Novel ESD protection solution for single-ended mixer in GaAs pHEMT technology

, 2013
Qiang Cui, Shuyun Zhang, Juin J. Liou
openalex   +2 more sources

Ultra-Wideband Transformer Feedback Monolithic Microwave Integrated Circuit Power Amplifier Design on 0.25 μm GaN Process. [PDF]

Micromachines (Basel)
Luo J, Fan Y, Wan J, Sun X, Liang X.
europepmc   +1 more source

Modeling of GaAs pHEMT parameters in Silvaco TCAD

Proceedings of Tomsk State University of Control Systems and Radioelectronics, 2016
openaire   +1 more source

Differential BroadBand (1-16 GHz) MMIC GaAs mHEMT Low-Noise Amplifier for Radio Astronomy Applications and Sensing. [PDF]

Sensors (Basel)
Jimenez-Martin JL, Gonzalez-Posadas V, Parra-Cerrada A, Espinosa-Adams D, Segovia-Vargas D, Hernandez W.   +5 more
europepmc   +1 more source

Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

, 2017
Norshakila Haris, Peter B. K. Kyabaggu, Mohammad A. Alim, A.A. Rezazadeh   +3 more
openalex   +2 more sources

Temperature Characteristics Modeling for GaN PA Based on PSO-ELM. [PDF]

Micromachines (Basel)
Lin Q, Wang M.
europepmc   +1 more source

Influence of Gate Dimensions on High Power Microwave Injection Effects for AlGaAs / GaAs pHEMT [PDF]

X. L. Wang, Yingxue Diao, Wei Li, Shiyue Wu, Bi Fan, Jiaxi Zhang, K.M. Chen, Yufei Lu, Yucheng Wang, Shaoxi Wang   +9 more
openalex   +1 more source

Monolithic Microwave Integrated Circuits for Wideband SAR System [PDF]

, 2003
Johansen, Tom Keinicke
core