Some investigations on anodic oxide films on gallium arsenide [PDF]
Chandan Kumar Ghosh, W. Polhamus
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INTERKONEKSI IC DIGITAL BERBAHAN GALLIUM ARSENIDE (GaAs)
Tata letak keping IC Digital berbahan GaAs memerlukan interkoneksi untuk keperluan konsumsi daya dan transmisi sinyal. Interkoneksi bahan GaAs perlu perhatian khusus karena transisi dengan kecepatan tinggi akan menghasilkan derau pada interkoneksi. Derau
Andreas Ardian Febrianto
doaj
Direct Subpicosecond Measurement of Carrier Mobility of Photoexcited Electrons in Gallium Arsenide [PDF]
M. C. Nuss, D. H. Auston, F. Capasso
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RNA Sequencing Analyses Reveal the Potential Mechanism of Pulmonary Injury Induced by Gallium Arsenide Particles in Human Bronchial Epithelioid Cells. [PDF]
Ouyang Y+5 more
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Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide [PDF]
D. K. Sadana, J. P. de Souza, F. Cardone
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The fabrication and emission of gallium arsenide lasing diodes
Robert Eugene Cavins
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Erratum: Experimental Study of Gold-Gallium Arsenide Schottky Barriers
Francesco Padovani, G. G. Sumner
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Comment on ‘‘Surface acoustic wave properties of aluminum gallium arsenide’’ [J. Appl. Phys.66, 90 (1989)] [PDF]
F.M. Fliegel+2 more
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Active devices for high temperature microcircuitry. [Silicon and gallium arsenide devices]
D.W. Palmer+3 more
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