Results 11 to 20 of about 4,160 (145)

Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling

Scientific Reports, 2022
A series of gallium arsenide bismide device layers covering a range of growth conditions are thoroughly probed by low-temperature, power-dependent photoluminescence measurements.
N. J. Bailey, T. B. O. Rockett, S. Flores, D. F. Reyes, J. P. R. David, R. D. Richards   +5 more
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Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices

Tecnología en Marcha, 2021
Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide.
Naveenbalaji Gowthaman, Viranjay M Srivastava   +1 more
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Influence of Substrate Material on Radiation Characteristics of THz Photoconductive Emitters

International Journal of Antennas and Propagation, 2015
We present in this paper spectral and spatial characteristics of terahertz emission from standard dipole antenna structures used as emitters depending on the substrate material.
Jens Klier, Garik Torosyan, Nina Susan Schreiner, Daniel Molter, Frank Ellrich, Wissem Zouaghi, Emilien Peytavit, Jean-François Lampin, René Beigang, Joachim Jonuscheit, Georg von Freymann   +10 more
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Non-equilibrium processes in a gas-discharge cell with plasma contacts [PDF]

E3S Web of Conferences
Non-equilibrium processes in a gas discharge cell with semiconductor electrodes made of semi-insulating gallium arsenide and sulfur-doped silicon have been studied experimentally.
Khaydarov Zokirjon, Yuldashev Khurshid, Khaydarov Bunyodbek, Sultanov Shuxrat, Ergashov Qaxramon, Axmadjonov Mirzaolim   +5 more
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Subcycle Wannier-Stark Localization by Mid-Infrared Bias in Gallium Arsenide [PDF]

EPJ Web of Conferences, 2019
The fundamental interband absorption in gallium arsenide shows a strong blue shift when biased by mid-infrared transients exceeding 10 MV/cm. This subcycle feature is induced by the localization of electronic wavefunctions from 3D to 2D.
Bühler Johannes, Schmidt Christian, Heinrich Alexander-Cornelius, Allerbeck Jonas, Podzimski Reinold, Berghoff Daniel, Meier Torsten, Schmidt Wolf Gero, Reichl Christian, Wegscheider Werner, Brida Daniele, Leitenstorfer Alfred   +11 more
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Magnetoelectric effect in ferromagnetic-semiconductor layered composite structures

EPJ Web of Conferences, 2018
The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented.
Fetisov Leonid, Chashin Dmitri, Saveliev Dmitri, Plekhanova Daria, Makarova Ludmila, Stognii Alexandr   +5 more
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GaAs on Si substrate with dislocation filter layers for wafer‐scale integration

ETRI Journal, 2021
GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer‐scale characteristics. The surface morphology and
HoSung Kim, Tae‐Soo Kim, Shinmo An, Duk‐Jun Kim, Kap Joong Kim, Young‐Ho Ko, Joon Tae Ahn, Won Seok Han   +7 more
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Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method

Crystals, 2023
In this study, an axisymmetric Czochralski furnace model for the LEC growth of gallium arsenide is presented. We produced 88 datasets through computational fluid dynamics simulations.
Xia Tang, Gagan Kumar Chappa, Lucas Vieira, Martin Holena, Natasha Dropka   +4 more
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Silicon-Germanium Dioxide and Aluminum Indium Gallium Arsenide-Based Acoustic Optic Modulators

Open Engineering, 2020
The purpose of this study was to clarify the silicon-germanium dioxide (SiGeO2) and Aluminum Indium Gallium Arsenide (AlInGaAs) based acoustic optic modulators for upgrading transmission performance characteristics.
El-Hageen Hazem M., Alatwi Aadel M., Rashed Ahmed Nabih Zaki   +2 more
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Gallium interstitial contributions to diffusion in gallium arsenide

AIP Advances, 2011
A new diffusion path is identified for gallium interstitials, which involves lower barriers than the barriers for previously identified diffusion paths [K. Levasseur-Smith and N. Mousseau, J. Appl. Phys. 103, 113502 (2008), P. A. Schultz and O. A.
Joseph T. Schick, Caroline G. Morgan
doaj   +1 more source