Results 11 to 20 of about 97,204 (266)

Biofunctionalisation of gallium arsenide with neutravidin [PDF]

open access: yesJournal of Colloid and Interface Science, 2021
We report a study presenting a physicochemical surface characterisation of the GaAs surface along the functionalisation with a high-affinity bioconjugation pair widely explored in the lifesciences: biotin and neutravidin. Combined X-ray photoelectron spectroscopy (XPS), wettability measurements and spectroscopic ellipsometry were used for a reliable ...
Barbara Santos Gomes   +4 more
openaire   +4 more sources

Dynamically reconfigurable high-efficiency terahertz metasurface holograms

open access: yesEPJ Applied Metamaterials, 2021
A reflective, dynamically reconfigurable, high-efficiency metasurface holographic scheme is presented in this paper, which is realized by pumping thin gallium arsenide wafers with a structured femtosecond laser.
Hu Mengyuan, Tian Zhen
doaj   +1 more source

Single Stage Low Noise Inductor-Less TIA for RF Over Fiber Communication

open access: yesIEEE Access, 2021
This paper presents design, mathematical analysis, and measurement of low noise single-stage transimpedance amplifier (TIA) with scalable bandwidth using 130 nm bipolar complementary metal-oxide-semiconductor (BiCMOS) silicon-germanium (SiGe) process ...
Vijay Kumar   +3 more
doaj   +1 more source

Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater [PDF]

open access: yesSeventh Topical Meeting on Integrated and Guided-Wave Optics, 1984
The goal of integrated optoelectronics is to monolithically integrate optoelectronic components with purely electronic components. In this paper we describe the demonstration of the monolithic integration of a laser, a transistor and a photodiode.
Bar-Chaim, N.   +3 more
openaire   +4 more sources

High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules

open access: yesScientific Reports, 2022
A low-temperature co-fired ceramic (LTCC)-based optocoupler design is demonstrated as a possible solution for optical isolation in high-density integrated power modules. The design and fabrication of LTCC based package are discussed.
Syam Madhusoodhanan   +7 more
doaj   +1 more source

ANALYSIS OF SOLAR ENERGY POTENTIAL BY REMOTE SENSING TECHNIQUES IN VARAŽDINSKA COUNTY, CROATIA [PDF]

open access: yesThe International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences, 2021
Renewable energy becomes more and more considered as energy production due to great benefits and less environmental impact then traditional energy sources.
N. Kranjčić   +4 more
doaj   +1 more source

Microscopic Nanomechanical Dissipation in Gallium Arsenide Resonators. [PDF]

open access: yesPhysical Review Letters, 2018
We report on a systematic study of nanomechanical dissipation in high-frequency (≈300  MHz) gallium arsenide optomechanical disk resonators, in conditions where clamping and fluidic losses are negligible.
Mehdi Hamoumi   +7 more
semanticscholar   +1 more source

Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS

open access: yesФізика і хімія твердого тіла, 2016
Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge
S. P. Novosyadlyi, V. S. Huzik
doaj   +1 more source

Fully Integrated THz Schottky Detectors Using Metallic Nanowires as Bridge Contacts

open access: yesIEEE Access, 2021
This paper investigates fully integrated Terahertz (THz) Schottky detectors using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium ...
Ahid S. Hajo   +4 more
doaj   +1 more source

Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling

open access: yesScientific Reports, 2022
A series of gallium arsenide bismide device layers covering a range of growth conditions are thoroughly probed by low-temperature, power-dependent photoluminescence measurements.
N. J. Bailey   +5 more
doaj   +1 more source

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