Results 21 to 30 of about 4,160 (145)

Metamaterial-Enhanced Nonlinear Terahertz Spectroscopy

EPJ Web of Conferences, 2013
We demonstrate large nonlinear terahertz responses in the gaps of metamaterial split ring resonators in several materials and use nonlinear THz transmission and THz-pump/THz-probe spectroscopy to study the nonlinear responses and dynamics.
Zhang X., Perkins B. G., Brandt N. C., Sternbach A., Strikwerda A. C., Zhang J., Fan K., Liu M., Hwang H. Y., Averitt R. D., Nelson K. A.   +10 more
doaj   +1 more source

Machine Learning for Designing Perovskites and Perovskite‐Inspired Solar Materials: Emerging Opportunities and Challenges

Advanced Science, EarlyView.
This review offers a comprehensive comparison between perovskites and perovskite‐inspired materials (PIMs), focusing on their crystal structures, electronic properties, and chemical compositions. It evaluates the applicability of machine learning (ML) descriptors and models across both material classes.
Yangfan Zhang, Yiming Xia, Ali Shakiba, Hongrui Zhang, Xiaojing Hao, Priyank V. Kumar, Mahesh P. Suryawanshi   +6 more
wiley   +1 more source

Pilot study on treatment and near zero discharge of gallium arsenide wafer processing wastewater

Gongye shui chuli
In the process of gallium arsenide wafer, a large number of toxic and harmful organic wastewater with arsenic was produced. In this paper, the process of “arsenic removal pretreatment+biochemical treatment+advanced treatment” was used to achieve the ...
LI Weichao, YANG Jun, CHANG Hai, GENG Tianchi, WU Yuchong, LIU Jingjing, WANG Yuyu, WU Yun, CHEN Yingbo   +8 more
doaj   +1 more source

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

E3S Web of Conferences, 2017
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes.
Campesato Roberta, Tukiainen Antti, Aho Arto, Gori Gabriele, Isoaho Riku, Greco Erminio, Guina Mircea   +6 more
doaj   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

Advanced Electronic Materials, EarlyView.
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis, Anastasia Soultati, Leonidas C. Palilis, Ermioni Polydorou, Konstantinos Davazoglou, Petros‐Panagis Filippatos, Goutham Raj Perumallapelli, Ravindra Naik Bukke, Abd. Rashid bin Mohd Yusoff, Ilhwan Ryu, Peng Gao, Alexander Chroneos, Mohammad Khaja Nazeeruddin, Maria Vasilopoulou   +13 more
wiley   +1 more source

High‐Speed Flexible Schottky Diodes Based on Carbon Nanotubes

Advanced Electronic Materials, EarlyView.
We demonstrate a flexible Schottky diode based on carbon nanotube network thin film, and the devices are fabricated via a low‐temperature process on a PI substrate, which exhibits excellent radio‐frequency characteristics, with a high responsivity 6 A/W at zero bias, a high intrinsic cut‐off frequency reaching 153 GHz, and an extrinsic cut‐off ...
Yan Li, Haoyu Zhang, Xinyi Zheng, Weifeng Wu, Xiaowei He, Li Ding, Sheng Wang   +6 more
wiley   +1 more source

Valence band engineering of GaAsBi for low noise avalanche photodiodes

Nature Communications, 2021
An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs)
Yuchen Liu, Xin Yi, Nicholas J. Bailey, Zhize Zhou, Thomas B. O. Rockett, Leh W. Lim, Chee H. Tan, Robert D. Richards, John P. R. David   +8 more
doaj   +1 more source

Performance Comparison of Monocrystalline, Polycrystalline, Low Concentrated, and Bifacial PV Modules in a Particular Geographic Location of South India

Energy Science &Engineering, EarlyView.
This study aims to conduct a performance comparison of irradiation and temperature on different commercially available PV modules like PPVM, MPVM, LPVM, and BPVM. Here, the TPVM is not considered in the analysis due to its toxic nature. This study has considered the LPVM because researchers have not focused on it due to the higher area requirement for ...
Meenatchi Sundaram Palanisamy, Prince Winston David, Palpandian Murugesan, Praveen Kumar Balachandran, Pravin Murugesan, Muhammad Ammirrul Atiqi Mohd Zainuri   +5 more
wiley   +1 more source

THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gate

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
Modeling results of output static characteristics of gallium arsenide transistors for extreme high frequency range are given. Direct ion-implanted gallium arsenide transistors with the special profile under the gate are analyzed.
V. N. Mishchenka
doaj