Subcycle Wannier-Stark Localization by Mid-Infrared Bias in Gallium Arsenide [PDF]
EPJ Web of Conferences, 2019 The fundamental interband absorption in gallium arsenide shows a strong blue shift when biased by mid-infrared transients exceeding 10 MV/cm. This subcycle feature is induced by the localization of electronic wavefunctions from 3D to 2D.
Bühler Johannes +11 more
doaj +1 more source
GaAs on Si substrate with dislocation filter layers for wafer‐scale integration
ETRI Journal, 2021 GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer‐scale characteristics. The surface morphology and
HoSung Kim +7 more
doaj +1 more source
Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices
Tecnología en Marcha, 2021 Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide.
Naveenbalaji Gowthaman +1 more
doaj +1 more source
Influence of Substrate Material on Radiation Characteristics of THz Photoconductive Emitters
International Journal of Antennas and Propagation, 2015 We present in this paper spectral and spatial characteristics of terahertz emission from standard dipole antenna structures used as emitters depending on the substrate material.
Jens Klier +10 more
doaj +1 more source
Non-equilibrium processes in a gas-discharge cell with plasma contacts [PDF]
E3S Web of ConferencesNon-equilibrium processes in a gas discharge cell with semiconductor electrodes made of semi-insulating gallium arsenide and sulfur-doped silicon have been studied experimentally.
Khaydarov Zokirjon +5 more
doaj +1 more source
Magnetoelectric effect in ferromagnetic-semiconductor layered composite structures
EPJ Web of Conferences, 2018 The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented.
Fetisov Leonid +5 more
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Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method
Crystals, 2023 In this study, an axisymmetric Czochralski furnace model for the LEC growth of gallium arsenide is presented. We produced 88 datasets through computational fluid dynamics simulations.
Xia Tang +4 more
doaj +1 more source
Spin-to-orbital angular momentum transfer by second harmonic generation in thin dielectric films [PDF]
EPJ Web of Conferences, 2023 We demonstrate spin-to-orbital angular momentum transfer in the bulk of nonlinear optical materials with a crystal symmetry that couples the longitudinal component of the pump field.
de Ceglia Domenico +9 more
doaj +1 more source
Optics Express, 2018 High harmonic spectroscopy in solids is emerging as a new tool to investigate ultrafast electron dynamics in the presence of strong optical fields. However, the observed high harmonic spectra do not usually reflect the microscopic origin of high harmonic
Peiyu Xia +6 more
semanticscholar +1 more source
Soft-mask fabrication of gallium arsenide nanomembranes for integrated quantum photonics [PDF]
Nanotechnology, 2015 We report on the fabrication of quantum photonic integrated circuits based on suspended GaAs membranes. The fabrication process consists of a single lithographic step followed by inductively coupled-plasma dry etching through an electron-beam-resist mask
L. Midolo +3 more
semanticscholar +1 more source