Fully Integrated THz Schottky Detectors Using Metallic Nanowires as Bridge Contacts
IEEE Access, 2021 This paper investigates fully integrated Terahertz (THz) Schottky detectors using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium ...
Ahid S. Hajo +4 more
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Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling
Scientific Reports, 2022 A series of gallium arsenide bismide device layers covering a range of growth conditions are thoroughly probed by low-temperature, power-dependent photoluminescence measurements.
N. J. Bailey +5 more
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Subcycle Wannier-Stark Localization by Mid-Infrared Bias in Gallium Arsenide [PDF]
EPJ Web of Conferences, 2019 The fundamental interband absorption in gallium arsenide shows a strong blue shift when biased by mid-infrared transients exceeding 10 MV/cm. This subcycle feature is induced by the localization of electronic wavefunctions from 3D to 2D.
Bühler Johannes +11 more
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Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices
Tecnología en Marcha, 2021 Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide.
Naveenbalaji Gowthaman +1 more
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Biofunctionalisation of gallium arsenide with neutravidin [PDF]
Journal of Colloid and Interface Science, 2021 We report a study presenting a physicochemical surface characterisation of the GaAs surface along the functionalisation with a high-affinity bioconjugation pair widely explored in the lifesciences: biotin and neutravidin. Combined X-ray photoelectron spectroscopy (XPS), wettability measurements and spectroscopic ellipsometry were used for a reliable ...
Barbara Santos Gomes +4 more
openaire +3 more sources
Influence of Substrate Material on Radiation Characteristics of THz Photoconductive Emitters
International Journal of Antennas and Propagation, 2015 We present in this paper spectral and spatial characteristics of terahertz emission from standard dipole antenna structures used as emitters depending on the substrate material.
Jens Klier +10 more
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Non-equilibrium processes in a gas-discharge cell with plasma contacts [PDF]
E3S Web of ConferencesNon-equilibrium processes in a gas discharge cell with semiconductor electrodes made of semi-insulating gallium arsenide and sulfur-doped silicon have been studied experimentally.
Khaydarov Zokirjon +5 more
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Magnetoelectric effect in ferromagnetic-semiconductor layered composite structures
EPJ Web of Conferences, 2018 The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented.
Fetisov Leonid +5 more
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GaAs on Si substrate with dislocation filter layers for wafer‐scale integration
ETRI Journal, 2021 GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer‐scale characteristics. The surface morphology and
HoSung Kim +7 more
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Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method
Crystals, 2023 In this study, an axisymmetric Czochralski furnace model for the LEC growth of gallium arsenide is presented. We produced 88 datasets through computational fluid dynamics simulations.
Xia Tang +4 more
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