Results 51 to 60 of about 4,160 (145)

Spectral‐Splitting Photovoltaic‐Thermal Solar Collectors Using Selective Hybrid Liquid‐Solid Optical Filters

open access: yesAdvanced Optical Materials, Volume 14, Issue 10, 13 March 2026.
A solar spectral‐splitting photovoltaic–thermal collector integrating a hybrid liquid‐solid optical filter is experimentally demonstrated. Selective optical filtering enables thermal–electrical decoupling, achieving elevated fluid temperatures while maintaining reduced PV operating temperatures.
Botho Lehmann   +2 more
wiley   +1 more source

Achieving Net‐Zero in the Electricity Sector in China by 2050 Considering Environmental and Economic Objectives

open access: yesAdvanced Sustainable Systems, Volume 10, Issue 3, March 2026.
China's pathways to net‐zero electricity by 2050 are evaluated using life cycle environmental and economic assessment across six scenarios. Results show that a renewables‐only grid offers the best overall environmental performance and lowest cost, but increases burdens on metal depletion, land use, and ecotoxicity.
Tingfeng Song   +2 more
wiley   +1 more source

OSILATOR BERBASIS GALLIUM ARSENIDE (GaAs)

open access: yesTechne, 2014
Gallium Arsenide (GaAs) merupakan bahan semikonduktor majemuk Penggunaan GaAs sebagai salahsatu bahan untuk semikonduktor sudah diteliti sejak lama, hanya saja penggunaan dan produksi semikonduktor berbahan GaAs yang ada saat ini masih sangat terbatas ...
Andreas Ardian Febrianto
doaj  

A Review on Biodegradable Materials of Sustainable Soft Robotics and Electronics

open access: yesAdvanced Science, Volume 13, Issue 15, 13 March 2026.
Biodegradable materials are gaining increasing attention in soft robotics and electronics due to their environmental friendliness, showing great potential for sustainability. In this review, the classification of biodegradable materials, their applications in the field of soft robotics and electronics, as well as the challenges and future prospects ...
Yizhu Xie   +8 more
wiley   +1 more source

Influence of thickness on crystallinity in wafer-scale GaTe nanolayers grown by molecular beam epitaxy

open access: yesAIP Advances, 2017
We grew wafer-scale, uniform nanolayers of gallium telluride (GaTe) on gallium arsenide (GaAs) substrates using molecular beam epitaxy. These films initially formed in a hexagonal close-packed structure (h-GaTe), but monoclinic (m-GaTe) crystalline ...
Che Jin Bae   +6 more
doaj   +1 more source

Wafer Scale III‐Nitride Deep‐Ultraviolet Vertical‐Cavity Surface‐Emitting Lasers Featuring Nanometer‐Class Control of Cavity Length

open access: yesAdvanced Science, Volume 13, Issue 13, 3 March 2026.
A DUV‐VCSEL strategy featuring the nanometer‐class control of the cavity length is proposed in the DUV optoelectronic framework based on GaN templates. After the sapphire removal, a self‐terminated etching technology is developed, whereby the cavity length can be accurately determined by epitaxy instead of the fabrication process. As such, a record low
Chen Ji   +18 more
wiley   +1 more source

Controlling the screening process of a nanoscaled space charge region by minority carriers

open access: yesNature Communications, 2016
Understanding the dynamics of bound and free charges and local electric fields on a nanometre scale are important in scanning tunnelling microscopy and nanoscale electronics. Here, the authors present a model system—a metallic tip near a gallium arsenide
Philipp Kloth   +2 more
doaj   +1 more source

Comprehensive Review on Concentrated Solar Photovoltaics: Manufacturing, Cooling Technologies, and Advanced Applications

open access: yesAdvanced Energy and Sustainability Research, Volume 7, Issue 3, March 2026.
This review examines the evolution and current state of concentrated photovoltaic systems, focusing on materials, manufacturing pathways, and thermal management challenges. Advanced cooling techniques and emerging applications are assessed alongside recent digital integration strategies. Through linking performance gains with practical limitations, the
Abdul Ghani Olabi   +7 more
wiley   +1 more source

InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

open access: yesIEEE Journal of the Electron Devices Society, 2018
2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell
Carlos Navarro   +7 more
doaj   +1 more source

A DFT Assessment on the Structural, Thermodynamic, and Electrical Properties of Transition Metal‐Doped Gallium Arsenide Nanoclusters (GanAsn, Where n = 4, 5, and 6)

open access: yesInternational Journal of Ceramic Engineering &Science, Volume 8, Issue 2, March 2026.
ABSTRACT The foundation of advanced nanotechnology lies in the extensive attention given by researchers to the exceptional properties of nanomaterials. This work incorporates a computational investigation on structural, thermodynamic, and electrical properties of different gallium arsenide nanoclusters—GanAsn, where n = 4, 5, and 6, and the effect of ...
Suhita Kar Chowdhury   +3 more
wiley   +1 more source

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