Results 1 to 10 of about 18,622 (173)

Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach [PDF]

Журнал нано- та електронної фізики, 2013
Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance.
Ashutosh Kumar, Michael Latzel, C. Tessarek, S. Christiansen, R. Singh   +4 more
doaj   +3 more sources

Editorial for the Special Issue on GaN-Based Materials and Devices: Research and Applications [PDF]

Micromachines
Gallium nitride (GaN)-based materials and devices, as a core representative of third-generation semiconductors, have emerged as a strategic frontier driving modern electronics and optoelectronics revolutions [...]
Wei Liu, Kun Wang
doaj   +2 more sources

Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V) [PDF]

Scientific Reports
This work demonstrates, for the first time, the three-dimensional monolithic integration of amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) directly on gallium nitride (GaN) high electron mobility transistors (HEMTs) in a ...
Tian-Li Wu, Hsin-Jou Ho, Chia-Wei Liu, Shivendra Kumar Singh, Yi-Chen Chen, Hsin-Wei Chen   +5 more
doaj   +2 more sources

Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices

Journal of Low Power Electronics and Applications, 2021
The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material ...
Mahesh B. Manandhar, Mohammad A. Matin
doaj   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Micromachines, 2022
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, Mohd Syamsul   +4 more
doaj   +1 more source

Preparation and Performance of Gallium Nitride Powders with Preferred Orientation

MATEC Web of Conferences, 2018
The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K).
Kang Liping, Wang Lingli, Wang Haiyan, Zhang Xiaodong, Wang Yongqiang   +4 more
doaj   +2 more sources

Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)

Results in Physics, 2019
In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular beam
Ho Xin Jing, Che Azurahanim Che Abdullah, Mohd Zaki Mohd Yusoff, Azzafeerah Mahyuddin, Zainuriah Hassan   +4 more
doaj   +1 more source

Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview

Energies, 2019
This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due
Mauricio Dalla Vecchia, Simon Ravyts, Giel Van den Broeck, Johan Driesen   +3 more
doaj   +1 more source

A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]

, 2014
A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah, Brown, Raphael, Li, Xu, Macfarlane, Douglas, Ternent, Gary, Thayne, Iain, Wasige, Edward, Zhou, Haiping   +7 more
core   +1 more source

Gallium Nitride Power Devices: A State of the Art Review

IEEE Access, 2023
Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with higher power densities.
Ander Udabe, Igor Baraia-Etxaburu, David Garrido Diez   +2 more
doaj   +1 more source