Results 11 to 20 of about 18,669 (218)

A Low-Cost and Compact High-Frequency Gallium Nitride Gradient Power Amplifier for Low-Field MRI. [PDF]

Magn Reson Med
ABSTRACT Purpose To reduce the upfront cost of small, low‐field MRI systems, while expanding the capabilities of their gradient systems. Methods A gradient power amplifier was designed to leverage the lowering cost of Gallium Nitride (GaN) power transistors and high speed logic, to achieve high efficiency and responsiveness for driving gradient coils ...
Bolding NR, Hannan J, Vaughn C, Patel A, Lin S, Sun JEP, Grissom W, Griswold MA.   +7 more
europepmc   +2 more sources

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +2 more sources

Synthesized of gallium Nitride/PSi nano thin films using 532 nm wavelength by pulsed laser deposition technique [PDF]

Engineering and Technology Journal
The porous silicon (PSi) substrate was accurately synthesized using photoelectrochemical etching. A Nanofilm gallium nitride (GaN) was then precisely deposited on this PSi substrate using pulsed laser deposition (PLD).
Abeer Abbas, Ali Alwahib, Makram Fakhri, Subash C. B. Gopinath, U. Hashim   +4 more
doaj   +1 more source

Effects of InGaN-interlayer on closed stripes of GaN grown by serpentine channel patterned sapphire substrate

Materials Research Express, 2022
Gallium nitride (GaN) is a widely investigated semiconductor owing to its fascinating features suitable for a plethora of optoelectronic applications; nevertheless, high-quality growth of this material remains a challenge.
Muhammad Saddique Akbar Khan, Menglai Lei, Huanqing Chen, Guo Yu, Rui Lang, Shukun Li, Xiaodong Hu   +6 more
doaj   +1 more source

Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride [PDF]

, 1998
High pressure chemistry has traditionally involved applying pressure and increasing temperature until conditions become thermodynamically favorable for phase transitions or reactions to occur.
Heath, James R., Kaner, Richard B., Kim, Sang-Ho, Nicol, Malcolm, Rao, Lin, Rose, Garry A., Wallace, Charles H.   +6 more
core   +1 more source

Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy

Конденсированные среды и межфазные границы, 2023
In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties and Raman scattering of the grown epitaxial GaN film.
Pavel V. Seredin, Nikolay A. Kurilo, Obaid Radam Ali, Nikita S. Buylov, Dmitry L. Goloshchapov, Sergey Alexandrovich Ivkov, Alexandr S. Lenshin, Ivan N. Arsentyev, Alexey V. Nashchekin, Shukrilo Sh. Sharofidinov, Andrey M. Mizerov, Maksim S. Sobolev, Evgeniy V. Pirogov, Igor V. Semeykin   +13 more
doaj   +1 more source

The Modeling of GaN-FET Power Devices in SPICE

Energies, 2023
This paper focuses on the problem of the modeling of FET power transistors made of gallium nitride offered by GaN Systems, Transphorm, and Nexperia. The considered devices have been available on the market since 2014.
Janusz Zarębski, Damian Bisewski
doaj   +1 more source

Fabrication method of GaN template for high-speed chemical lift-off

AIP Advances, 2023
In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and improve
Woo Seop Jeong, Min Joo Ahn, Hyun-A Ko, Kyu-yeon Shim, Seongho Kang, Hwayoung Kim, Dae-sik Kim, Junggeun Jhin, Dongjin Byun   +8 more
doaj   +1 more source

Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application

IEEE Access, 2019
Gallium nitride is becoming more popular in low-voltage applications. Gallium nitride (GaN) high electron mobility transistors (HEMTs) has positive temperature feature. It makes parallel application feasible for GaN HEMTs. Meanwhile, paralleled GaN HEMTs
Yajing Zhang, Jianguo Li, Jiuhe Wang
doaj   +1 more source

Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine

Nanomaterials, 2016
Gallium nitride (GaN) nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC) non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO3)3∙xH2O) was used as a raw material and NH3 gas was used as a nitridation ...
Tae-Hee Kim, Sooseok Choi, Dong-Wha Park
doaj   +1 more source