Results 21 to 30 of about 18,669 (218)

Enhanced UV detection in GaN-based photodetectors through InN/AlN heterostructure integration and doping-engineered PIN architecture [PDF]

AIP Advances
This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal–semiconductor–metal (MSM) photodetectors designed for ultraviolet (UV) applications.
M. Kilin, O. Tanriverdi, B. Karahan, F. Yasar   +3 more
doaj   +1 more source

Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

Materials Research Express, 2020
A series of AlN/GaN heterostructures were grown on 150 mm Si substrates by metal organic chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride (GaN) and silicon nitride (SiN _x ), were used to passivate the ...
Yuanyang Xia, Youhua Zhu, Chunhua Liu, Hongyuan Wei, Tingting Zhang, Yeeheng Lee, Tinggang Zhu, Meiyu wang, Li Yi, Mei Ge   +9 more
doaj   +1 more source

Neutron detection using boron gallium nitride semiconductor material

APL Materials, 2014
In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter.
Katsuhiro Atsumi, Yoku Inoue, Hidenori Mimura, Toru Aoki, Takayuki Nakano   +4 more
doaj   +1 more source

Recycling the GaN Waste from LED Industry by Pressurized Leaching Method

Metals, 2018
In recent years, with the increasing research and development of the light-emitting diode (LED) industry, which contains gallium nitride (GaN), it is expected that there will be a large amount of related wastes in the future.
Wei-Sheng Chen, Li-Lin Hsu, Li-Pang Wang
doaj   +1 more source

Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light-emitting diodes

The Journal of Engineering, 2015
The authors have investigated the impact of nanowire geometry on the carrier transport in axial indium gallium nitride and gallium nitride (InGaN/GaN) nanowire light-emitting diodes (LEDs). The results reveal that hole transport depends critically on the
Shaofei Zhang, David Arto Laleyan, Qi Wang, Zetian Mi   +3 more
doaj   +1 more source

Experimental dataset of nanoporous GaN photoelectrode supported on patterned sapphire substrates for photoelectrochemical water splitting

Data in Brief, 2019
GaN is one of the most promising materials for high PEC efficiency to produce clean, renewable hydrogen in an ecofriendly manner (Ebaid et al., 2015; Kamimura et al., 2017; Yang et al., 2018; Ohkawa et al., 2013).
Dongjing Li, Jianghua Liu, Yang Wang, Aixia Wu, Ruolin Ruan, Zeping Li, Zhimou Xu   +6 more
doaj   +1 more source

New 2D Structural Materials: Carbon–Gallium Nitride (CC–GaN) and Boron–Gallium Nitride (BN–GaN) Heterostructures—Materials Design Through Density Functional Theory [PDF]

ACS Omega, 2019
New class of ternary nanohetrostructures have been proposed by mixing 2D gallium nitride (GaN) with graphene and 2D hexagonal boron nitride (BN) with an aim towards desgining innovative 2D materials for applications in electronics and other industries.
Van W. Elloh, Abu Yaya, G. Gebreyesus, Piyush Dua, Abhishek K. Mishra   +4 more
openaire   +3 more sources

Synthesis of Single Crystal GaN Nanowires

Nanomaterials and Nanotechnology, 2016
The straight and curved gallium nitride (GaN) nanowires were successfully synthesized by controlling the gallium/ nitrogen reactant ratio via a chemical vapour deposition method.
Lining Fang, Bin Cai
doaj   +1 more source

Bright Room-Temperature Single Photon Emission from Defects in Gallium Nitride

, 2016
Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However,
Aharonovich, Igor, Berhane, Amanuel M., Bodrog, Zoltán, Englund, Dirk R., Fiedler, Saskia, Gali, Adam, Jeong, Kwang-Yong, Palacios, Tomas, Schroder, Tim, Schröder, Tim, Toth, Milos, Vico Trivino, Noelia   +11 more
core   +1 more source

III-Nitride Materials: Properties, Growth, and Applications

Crystals
Since the activation of magnesium (Mg) in p-type gallium nitride (GaN) [...]
Yangfeng Li
doaj   +1 more source