Results 31 to 40 of about 18,669 (218)

Efficiency analysis of wide band-gap semiconductors for two-level and three-level power converters [PDF]

, 2019
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new ...
Collado Escolano, Alfonso, Gálvez, Eduardo, Lumbreras Carrasco, David, Mon González, Juan, Zaragoza Bertomeu, Jordi   +4 more
core   +1 more source

Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications

Crystals, 2018
An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n+-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/
Yi-Yun Chen, Yuan-Chang Jhang, Chia-Jung Wu, Hsiang Chen, Yung-Sen Lin, Chia-Feng Lin   +5 more
doaj   +1 more source

Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Crystals, 2020
The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates.
Haixiao Hu, Baoguo Zhang, Lei Liu, Deqin Xu, Yongliang Shao, Yongzhong Wu, Xiaopeng Hao   +6 more
doaj   +1 more source

Supercritical millifluidic reactor for the synthesis of efficient GaN nanophotocatalysts

Chemical Engineering Journal Advances, 2023
Here, we demonstrate the continuous synthesis of gallium nitride (GaN) nanophotocatalysts exhibiting high quantum confinement using a preheated supercritical millireactor.
Prasaanth Ravi Anusuyadevi, Zachary S. Campbell, Arnaud Erriguible, Samuel Marre, Cyril Aymonier   +4 more
doaj   +1 more source

SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE [PDF]

Научно-технический вестник информационных технологий, механики и оптики, 2016
Subject of Research.The paper deals with processes of formation and transformation of defects during multi-stage growth of thick gallium nitride layers with hydride vapor phase epitaxy on GaN/Al2O3 substrates with buried column pattern formed with the ...
Marina G. Mynbaeva, Demid A. Kirilenko , Alla A. Sitnikova, Arina V. Kremleva , Vladimir I. Nikolaev, Karim D. Mynbaev, Maxim A. Odnoblyudov, Harri Lipsanen , Vladislav E. Bougrov, Alexey E. Romanov   +9 more
doaj   +1 more source

Temperature dependent control of the solubility of gallium nitride in supercritical ammonia using mixed mineralizer

Chemistry Central Journal, 2018
Using a mass-loss method, we investigated the solubility change of gallium nitride (GaN) in supercritical ammonia with mixed mineralizers [ammonium chloride (NH4Cl) + ammonium bromide (NH4Br) and NH4Cl + ammonium iodide (NH4I)].
Daisuke Tomida, Kiyoshi Kuroda, Kentaro Nakamura, Kun Qiao, Chiaki Yokoyama   +4 more
doaj   +1 more source

Free-space and underwater GHz data transmission using AlGaInN laser diode technology [PDF]

, 2016
Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications; in particular for free space laser communication.
Boćkowski, M., Czernecki, R., Kelly, A.E., Kucharski, R., Leszczyński, M., Marona, L., Najda, S.P., Perlin, P., Suski, T., Targowski, G., Watson, S., Wisniewski, P.   +11 more
core   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Reduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structure

Micro & Nano Letters, 2022
Heteroepitaxial growth of gallium nitride (GaN) over patterned Silicon (Si) substrates using serpentine channel structure was demonstrated and studied with transmission electron microscopy (TEM).
Kejia Wang, Tiantian Wei, Yuzi Song, Yahong Xie, Xiaodong Hu, Zhiyuan Cheng   +5 more
doaj   +1 more source

Raoult's Formalism in Understanding Low Temperature Growth of GaN Nanowires using Binary Precursor

, 2015
Growth of GaN nanowires are carried out via metal initiated vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour deposition technique, GaN nanowires are usually grown at high temperatures in the range of 900-1100 ^oC because of low ...
Amirthapandian, S., Dhara, S., Madapu, Kishore K., Polaki, S., Tyagi, A. K.   +4 more
core   +2 more sources