Results 41 to 50 of about 18,669 (218)
Indium Nitride and Indium Gallium Nitride layers grown on nanorods [PDF]
, 2013 Molecular beam epitaxy has been used to grow InN layers on both Si and SiCsubstrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array.
Cherns, David +6 more
core +2 more sources
Borophene: Crucial Challenges and the Way Forward
Advanced Science, EarlyView.This review explores the challenges and progress in borophene research, focusing on synthesis strategies, structural properties, and potential applications. It highlights key experimental breakthroughs, discusses theoretical insights into borophene's unique features, and addresses pathways for overcoming stability and scalability issues.
Zhixuan Li +3 more
wiley +1 more source
, 2016 We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant ...
Carlin, Jean-François +8 more
core +2 more sources
Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys
Advanced Science, EarlyView.This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin +11 more
wiley +1 more source
UV LED System for PL Measurements on GaN Samples [PDF]
, 2019 Gallium Nitride materials are direct bandgap semiconductors with important applications, such as in the production of light-emitting diodes and transistors.
Pantova, Dona H
core +1 more source
Magnetic studies of GaN nanoceramics
, 2006 The synthesis, morphology and magnetization measurements of GaN nanoceramics obtained under high pressure are reported. In particular the effect of grain size on magnetic properties of GaN nanopowders and nanoceramics was investigated.
Nyk, M., Strek, W., Zaleski, A. J.
core +1 more source
Electroluminescence from single nanowires by tunnel injection: an experimental study [PDF]
, 2007 We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire.
Federico Capasso +12 more
core +2 more sources
Advanced Electronic Materials, EarlyView.III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero +6 more
wiley +1 more source
Synthesis of Serrated GaN Nanowires for Hydrogen Gas Sensors Applications by Plasma-Assisted Vapor Phase Deposition Method [PDF]
Journal of Nanostructures, 2017 Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function.
Mahdi Gholampour, Mahdi Soltanzadeh
doaj +1 more source
AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
, 2019 To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable.
Hatui, Nirupam +6 more
core +1 more source