Results 51 to 60 of about 18,669 (218)

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Analytical Model for the Optical Functions of Indium Gallium Nitride with Application to Thin Film Solar Photovoltaic Cells

, 2012
This paper presents the preliminary results of optical characterization using spectroscopic ellipsometry of wurtzite indium gallium nitride (InxGa1-xN) thin films with medium indium content (0 ...
McLaughlin, D. V. P., Pearce, Joshua M.
core   +3 more sources

Functionalizing Conductive Diamond: Recent Advance in Fabrication, Modifications, and Applications

Carbon Energy, EarlyView.
This review highlights recent advancements in the synthesis, modification, and electrochemical applications of conductive diamond, particularly boron‐doped diamond (BDD). It emphasizes progress in fabrication methods, including CVD and HPHT, and explores modifications such as doping, surface terminations, and composite design, enabling significant ...
Ning Linghu, Xin Jiang, Jing Xu
wiley   +1 more source

Gallium Nitride‐Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform

Small, EarlyView.
This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Farasat Haider, Batool Esmat, Ali Raza Kashif, Muhammad Shahid Khan, Akif Safeen, Basit Ali Khan, Karim Khan, Basit Ali   +7 more
wiley   +1 more source

Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

, 2015
Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoelectronic devices.
Amirthapandian, S., Bera, S., Bhattacharya, Anirban, Dhara, Sandip, Pandian, Ramanathaswamy, Patsha, Avinash   +5 more
core   +2 more sources

Time to Breakdown for Type I Motor Winding Insulation Under High‐Frequency High‐Slew‐Rate Square Wave Voltages

High Voltage, EarlyView.
ABSTRACT The emergence of (ultra)wide bandgap ((U)WBG)‐based devices has significantly enhanced performance in high‐frequency switching applications, enabling breakthroughs in electric transportation, aerospace, and renewable energy systems. However, it also presents considerable challenges to insulation systems, such as electric motor winding ...
Easir Arafat, Md Asifur Rahman, Farzana Islam, Mona Ghassemi   +3 more
wiley   +1 more source

Temperature stability of intersubband transitions in AlN/GaN quantum wells

, 2010
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons.
Andersson, Thorvald G., Berland, Kristian, Farivar, Rashid, Hyldgaard, Per, Larsson, Anders, Stattin, Martin, Sultan, D. M. S., Wang, Shu Min   +7 more
core   +1 more source

Study of the Dislocation and Luminescence Intensity Distributions of Gallium Nitride LED on the Carbon-Nanotubes Patterned Sapphire Substrate

International Journal of Electrochemical Science, 2014
Gallium nitride (GaN) films have been grown on the sapphire substrate with and without carbon- nanotubes (CNTs). The stripy defects distribution of the GaN film on the CNTs patterned sapphire substrate (CPSS) coincides with the morphology of the CNTs ...
Mingsheng Xu, Yang Wei, Shuang Qu, Chengxin Wang, Xiaobo Hu, Xiangang Xu   +5 more
doaj   +1 more source

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Gallium Nitride Schottky Devices for UV and Particle Sensing Applications

physica status solidi (a), Volume 223, Issue 5, 6 March 2026.
Gallium nitride Schottky devices on native substrates have potential for reliable, low‐leakage, and high‐performance radiation detection in extreme environments. The study explores carrier dynamics by laterally scanning a pulsed‐UV laser from the edge of the Schottky to assess charge collection, and extracts defect properties by optical‐DLTS that ...
Alexandre William Walker, Enrico Giulio Villani, Christoph Thomas Klein, Jean‐Paul Noël, Craig Storey, Ryan Hunter Griffin, Thomas Koffas   +6 more
wiley   +1 more source