Results 61 to 70 of about 18,669 (218)
Compositionally Graded Indium Gallium Nitride Solar Cells [PDF]
, 2017 For the past several decades, methods to harvest solar energy have been investigated intensively. A majority of the work done in this field has been on solar cells made with silicon – the most mature semiconductor material.
Matthews, Christopher
core +2 more sources
Equations for filling factor estimation in opal matrix
, 2005 We consider two equations for the filling factor estimation of infiltrated zinc oxide (ZnO) in silica (SiO_2) opal and gallium nitride in ZnO opal. The first equation is based on the effective medium approximation, while the second one - on Maxwell ...
Abrarov +34 more
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Z‐Scheme Water Splitting Systems Based on Solid‐State Electron Conductors
Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.This review examines the latest advances in Z‐scheme overall water splitting (OWS) systems for solar hydrogen production. These systems consist of suspended or immobilized hydrogen evolution photocatalysts (HEPs) and oxygen evolution photocatalysts (OEPs).
Chen Gu +3 more
wiley +1 more source
Advanced Functional Materials, Volume 36, Issue 19, 5 March 2026.The article reviews laser‐processed carbons from various precursors, processing mechanism and their application in advanced batteries. The laser process is chemical free, fast, and scalable, enabling improved battery performance and stability for Li, Na, and Zn battery technologies.
Sujit Deshmukh +2 more
wiley +1 more source
Shielding electrostatic fields in polar semiconductor nanostructures
, 2016 Modern opto-electronic devices are based on semiconductor heterostructures employing the process of electron-hole pair annihilation. In particular polar materials enable a variety of classic and even quantum light sources, whose on-going optimisation ...
Callsen, G. +3 more
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PearSAN: A Machine Learning Method for Inverse Design Using Pearson Correlated Surrogate Annealing
Advanced Optical Materials, Volume 14, Issue 10, 13 March 2026.A machine learning–assisted inverse design framework is introduced to overcome the curse of dimensionality in complex nanophotonic design problems. By leveraging Pearson‐correlated surrogate annealing (PearSAN) method within a generative latent space, rapid convergence toward optimal thermophotovoltaic metasurface designs is achieved, enabling precise ...
Michael Bezick +8 more
wiley +1 more source
Theory of Doping and Defects in III-V Nitrides
, 1998 Doping problems in GaN and in AlGaN alloys are addressed on the basis of state-of-the-art first-principles calculations. For n-type doping we find that nitrogen vacancies are too high in energy to be incorporated during growth, but silicon and oxygen ...
Neugebauer, Joerg +2 more
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Photonic Hybrid Integration: Strategies and Promises of Advanced Additive Manufacturing
Advanced Optical Materials, Volume 14, Issue 10, 13 March 2026.Heterogeneous photonic integration combines wafer bonding, transfer printing, and advanced multi‐photon lithography to realize compact, adaptable photonic systems. This review highlights breakthroughs in hybrid materials, metrology, and 4D printing, revealing how the convergence of traditional and emerging fabrication unlocks scalable, high‐performance
Zhitian Shi +3 more
wiley +1 more source
Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN
Elektronika ir Elektrotechnika, 2019 This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN).
Marek Suproniuk +5 more
doaj +1 more source
Growth of single-crystal gallium nitride [PDF]
, 1970 Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire ...
Clough, R., Richman, D., Tietjen, J.
core +1 more source