Results 71 to 80 of about 18,669 (218)

Imperfection in Semiconductors Leading to High Performance Devices

Advanced Science, Volume 13, Issue 13, 3 March 2026.
Crystalline perfection is typically pursued in semiconductors to enhance device performance. However, through modeling and experimental work, we show that defects can be strategically employed in a specific detection regime to increase sensitivity to extreme values. GaN diodes are demonstrated to effectively detect high‐energy proton beams at fluxes as
Jean‐Yves Duboz, Matilde Siviero, Lucas Lesourd, Eric Frayssinet, Sebastien Chenot, Petter Hofverberg, Sullivan Marafico, Marie Vidal, Maxime Hugues   +8 more
wiley   +1 more source

Gallium Nitride High-Electron-Mobility Transistor-Based High-Energy Particle-Detection Preamplifier

Metrology
GaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most wide-
Gilad Orr, Moshe Azoulay, Gady Golan, Arnold Burger   +3 more
doaj   +1 more source

Phonon transport unveils the prevalent point defects in GaN

, 2017
Determining the types and concentrations of vacancies present in intentionally doped GaN is a notoriously difficult and long-debated problem. Here we use an unconventional approach, based on thermal transport modeling, to determine the prevalence of ...
Carrete, Jesús, Katre, Ankita, Madsen, Georg K. H., Mingo, Natalio, Wang, Tao   +4 more
core   +1 more source

Wafer Scale III‐Nitride Deep‐Ultraviolet Vertical‐Cavity Surface‐Emitting Lasers Featuring Nanometer‐Class Control of Cavity Length

Advanced Science, Volume 13, Issue 13, 3 March 2026.
A DUV‐VCSEL strategy featuring the nanometer‐class control of the cavity length is proposed in the DUV optoelectronic framework based on GaN templates. After the sapphire removal, a self‐terminated etching technology is developed, whereby the cavity length can be accurately determined by epitaxy instead of the fabrication process. As such, a record low
Chen Ji, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Ziyao Zhang, Fuyun Tan, Chengzhi Ji, Junchuan Zhang, Erfei Zhang, Xiangning Kang, Zhixin Qin, Guangxu Ju, Jiejun Wu, Xuelin Yang, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen   +18 more
wiley   +1 more source

Failure mechanisms and electromechanical coupling in semiconducting nanowires

EPJ Web of Conferences, 2010
One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells.
Peng B., Agrawal R., Espinosa H.D., Bernal R.A.   +3 more
doaj   +1 more source

Emerging Device Applications From Strong Light–Matter Interactions in 2D Materials

Advanced Science, Volume 13, Issue 17, 23 March 2026.
Two‐dimensional semiconductors enable extremely compact optoelectronic devices such as solar cells, sensors, LEDs, and lasers. Their strong light–matter interactions allow efficient light emission, detection, and energy conversion. This review article discusses the recent progress in integrating these materials with optical cavities and nanostructures ...
Janani Archana K, Kumar Shwetabh, Reyas Ali, Ramji Velayutham, Koustav Das, Abhishek Mondal, Prashant Kumar, Surendra B. Anantharaman   +7 more
wiley   +1 more source

Electron-phonon relaxation and excited electron distribution in gallium nitride

, 2015
We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons.
E. V. Chulkov, Eliashberg G. M., Loudon R., Nayfeh A. H., P. M. Echenique, V. G. Tyuterev, V. P. Zhukov   +6 more
core   +1 more source

Emerging Advanced Electronic Packaging Materials for Thermal Management in Power Electronics

Advanced Science, Volume 13, Issue 17, 23 March 2026.
This review surveys emerging materials for thermal management in advanced electronic packaging, with emphasis on ceramic substrates and thermal interface materials. Multiscale simulations and mechanistic analyses are highlighted, alongside the emerging role of artificial intelligence in predicting thermal properties and guiding design, offering ...
Yongjun Huo, Jiaqi Song, Wenqian Li, Jian Zhang, Yujin Zhang, Yang Fu, Wangchao Yuan, Xin Chen, Sichen Liu, Miao Jiang, Yuan Cheng, Gang Zhang   +11 more
wiley   +1 more source

New Nitride Nanoceramics from Synthesis-Mixed Nanopowders in the Composite System Gallium Nitride GaN-Titanium Nitride TiN. [PDF]

Materials (Basel), 2021
Drygaś M, Lejda K, Janik JF, Łyszczarz K, Gierlotka S, Stelmakh S, Pałosz B.   +6 more
europepmc   +1 more source

Liquid-Metal-Enabled Synthesis of Aluminum-Containing III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy

, 2016
Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices.
Liang, Yu-Han, Nuhfer, T., Towe, Elias
core