, 2010 Growth of gallium nitride on GaN(0001) surface is modeled by Monte Carlo method. Simulated growth is conducted in N-rich conditions, hence it is controlled by Ga atoms surface diffusion.
Bentley W. A. +4 more
core +1 more source
MXene‐Based Functional Platforms for Diabetes Prevention and Treatment
Carbon Neutralization, Volume 5, Issue 2, March 2026.MXenes have been applied to antidiabetic treatment (wound treatment, glucose monitoring, and treatment of complications) with the representative work. ABSTRACT In recent years, a class of 2D transition metal carbides, nitrides, and carbonitrides (MXenes) has demonstrated outstanding advantages in the field of diabetes treatment, particularly in ...
Zixuan Wang +5 more
wiley +1 more source
Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review
Micromachines, 2016 Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3 . 4 e V . GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent ...
Yucheng Lan +5 more
doaj +1 more source
Impact of Screw and Edge Dislocation on the Thermal Conductivity of Nanowires and Bulk GaN
, 2017 We report on thermal transport properties of wurtzite GaN in the presence of dislocations, by using molecular dynamics simulations. A variety of isolated dislocations in a nanowire configuration were analyzed and found to reduce considerably the thermal ...
Belabbas, Imad +5 more
core +3 more sources
Engineering Reports, Volume 8, Issue 3, March 2026.A novel three‐layer architecture is proposed for cell‐to‐cell communication, integrating molecular, nano‐electronic, and digital components. It enables bio‐integrated applications such as remote emotional touching, consensual telepathy, and autonomous drug delivery. Molecular Communication (MC) is utilized with advanced implants, modulation techniques,
Saeed Banaeian Far +2 more
wiley +1 more source
Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature [PDF]
Journal of Optoelectronical Nanostructures, 2018 Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C).
Mahdi Gholampour +4 more
doaj
III-nitride power semiconductor technology toward carbon peaking and carbon neutrality goals
机车电传动, 2023 Guided by the national development strategy of China about carbon peaking and carbon neutrality, it is necessary to use clean energy and electricity in energy consumption, and power semiconductor technology plays a crucial part in this 2 processes.
LUO Zhuoran +3 more
doaj
Novel Composite Nitride Nanoceramics from Reaction-Mixed Nanocrystalline Powders in the System Aluminum Nitride AlN/Gallium Nitride GaN/Titanium Nitride TiN (Al:Ga:Ti = 1:1:1). [PDF]
Materials (Basel), 2022 Drygas M +4 more
europepmc +1 more source
Ferroelectric‐Enhanced Self‐Driven Solar‐Blind Photodetector in the GaN‐In2Se3 p‐n Junction
Information &Functional Materials, Volume 3, Issue 1, Page 47-55, March 2026.We designed a self‐driven GaN‐In2Se3 p‐n junction photodetector with high performance, leveraging the synergy of the built‐in electric field and ferroelectric polarization. At a bias voltage of 0 V, the photodetector exhibits excellent self‐driven performance in the SBUV region with responsivity of 54.95 mA/W and detectivity of 1.66 × 1012 Jones ...
Jiaxing Jiang +9 more
wiley +1 more source
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition. [PDF]
Nanomaterials (Basel), 2021 Schilirò E +12 more
europepmc +1 more source