Results 181 to 190 of about 14,063 (222)
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2018
This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally
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This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally
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MRS Proceedings, 2008
AbstractThis paper is overviewed the recent progress on GaN HEMTs. High power, high frequency and high efficiency performance are reported. In addition, the results about long-term reliabilities and good manufacturability demonstrate that GaN HEMTs are ready for mass production.
Shigeru Nakajima +2 more
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AbstractThis paper is overviewed the recent progress on GaN HEMTs. High power, high frequency and high efficiency performance are reported. In addition, the results about long-term reliabilities and good manufacturability demonstrate that GaN HEMTs are ready for mass production.
Shigeru Nakajima +2 more
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AlGaN-GaN Double-Channel HEMTs
IEEE Transactions on Electron Devices, 2005We present the design, fabrication, and characterization of AlGaN-GaN double-channel HEMTs. Two carrier channels are formed in an AlGaN-GaN-AlGaN-GaN multilayer structure grown on a sapphire substrate. Polarization field in the lower AlGaN layer fosters formation of a second carrier channel at the lower AlGaN-GaN interface, without creating any ...
Chu, Rongming +5 more
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High Performance AlGaN/GaN Hemts on GaN Substrates
ECS Meeting Abstracts, 2016AlGaN/GaN HEMTs grown on GaN substrates have the potential to achieve significant improvement in device performance and reliability. We present a comprehensive study of high performance AlGaN/GaN HEMTs on GaN substrate with an emphasis on correlation of defects with device performance and reliability. Three AlGaN/GaN HEMT structures (AlGaN/GaN-HEMTs-on-
Lei Lei +8 more
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MRS Proceedings, 2003
AbstractHigh quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area.
B. Luo +8 more
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AbstractHigh quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area.
B. Luo +8 more
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Intermodulation Distortion in GaN HEMT
2009This work treats intermodulation distortion performance of GaN HEMT high-power transistors. A detailed study on the physical parameters influencing third-order intermodulation distortions is carried out, based on the large-signal model and on physical device simulation.
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High frequency GaN HEMT Modeling with ASM-HEMT
2022 17th European Microwave Integrated Circuits Conference (EuMIC), 2022R. Sommet +3 more
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Integrative oncology: Addressing the global challenges of cancer prevention and treatment
Ca-A Cancer Journal for Clinicians, 2022Jun J Mao,, Msce +2 more
exaly
Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials, 1999
N.-Q. Zhang +5 more
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N.-Q. Zhang +5 more
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