Results 31 to 40 of about 37,307 (275)
Nano-porosity in GaSb induced by swift heavy ion irradiation [PDF]
, 2016 Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime.
Afra, B +12 more
core +1 more source
Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors
Crystals, 2017 Groups III–V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications.
Shouzhu Niu +6 more
doaj +1 more source
AIP Advances, 2023 Orientation-patterned gallium phosphide (OP-GaP) and orientation-patterned gallium antimonide (OP-GaSb) have demonstrated excellent potential for broadband second harmonic generation (SHG), with a wide range of fundamental wavelengths and temperature ...
Ruilin Hu, Qiang He
doaj +1 more source
Type II superlattices for infrared detectors and devices [PDF]
, 1991 Superlattices consisting of combinations of III-V semiconductors with type II band alignments are of interest for infrared applications because their energy gaps can be made smaller than those of any 'natural' III-V compounds.
Chow, D. H. +4 more
core +1 more source
Band gap reduction in GaNSb alloys due to the anion mismatch [PDF]
, 2005 The structural and optoelectronic properties in GaNxSb1–x alloys ...
Ashley, T. +10 more
core +2 more sources
GASB Statement No. 31: Why No Controversy? [PDF]
, 2009 Fair value reporting of investments in the financial statements of commercial enterprises is required under FASB Statement No. 115. The standard created much controversy when issued due to provisions that changes in fair values of certain investments ...
Hunt, George L.
core +3 more sources
Skipping orbits and enhanced resistivity in large-diameter InAs/GaSb antidot lattices [PDF]
, 1998 We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. In addition to the usual commensurability features at low magnetic field we found a broad maximum of classical origin around 2.5 T. The latter can be ascribed to
A. Lorke +22 more
core +2 more sources
High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport [PDF]
PHYSICAL REVIEW MATERIALS, 2018 High mobility, strong spin-orbit coupling, and large Land\'e g-factor make the two-dimensional electron gas (2DEG) in InAs quantum wells grown on nearly-lattice-matched GaSb substrates an attractive platform for mesoscopic quantum transport experiments ...
C. Thomas +9 more
semanticscholar +1 more source
FIBONACCI SUPERLATTICES OF NARROW-GAP III-V SEMICONDUCTORS [PDF]
, 1995 We report theoretical electronic structure of Fibonacci superlattices of narrow-gap III-V semiconductors. Electron dynamics is accurately described within the envelope-function approximation in a two-band model.
B Mendez +14 more
core +3 more sources
Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems [PDF]
, 2018 We present molecular beam epitaxial grown single- and double-side $\delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers.
C. Lehner +6 more
semanticscholar +1 more source