Results 51 to 60 of about 37,307 (275)
, 2007 We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface of GaSb ...
A. Wood +9 more
core +1 more source
Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb [PDF]
, 2016 The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band ...
Bulutay, Ceyhun +2 more
core +2 more sources
Unraveling Band‐Tail Effects on Temperature‐Dependent Emission in GaAsBi via Photoluminescence
Advanced Science, EarlyView.An innovative dual‐spectroscopy approach resolves the debate over GaAsBi's emission temperature sensitivity. By combining temperature‐dependent photoluminescence and transmission spectroscopy, the method decouples the contributions of band‐tail states from the intrinsic band‐edge behavior.
Bing Yan +6 more
wiley +1 more source
Thermophotovoltaic applications in waste heat recovery systems: example of GaSb cell
International Journal of Low-Carbon Technologies, 2019 In this study, it is aimed at evaluating real data in high temperature GaSb cell thermophotovoltaic (TPV) systems. The TPV systems are considered as an alternative energy source in terms of efficient use of waste heat, cost and efficiency.
Z. Utlu
semanticscholar +1 more source
Scanning tunneling microscopy of lnAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry [PDF]
, 1994 Scanning tunneling microscopy and spectroscopy is used to characterize InAs/GaSb superlattices, grown by molecular-beam epitaxy. Roughness at the interfaces between InAs and GaSb layers is directly observed in the images, and a quantitative spectrum of ...
Collins, D. A. +4 more
core
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Edge transport in InAs and InAs/GaSb quantum wells [PDF]
, 2017 We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells.
S. Mueller +6 more
semanticscholar +1 more source
Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes. . [PDF]
, 2007 Room temperature electroluminescence in the midinfrared near 4 µm is reported from GaInAsSbP light emitting diodes grown on GaSb by liquid phase epitaxy.
Batty, P. J. +5 more
core +1 more source
Mid‐Infrared Integrated Photonics: Material Platforms and Emerging Applications
Laser &Photonics Reviews, EarlyView.Mid‐infrared (MIR) integrated photonics enables advanced chemical and biological sensing through the unique absorption features of molecules in the 2–20 µm range. This review highlights recent material advances such as chalcogenide glasses, silicon, and graphene and explores MIR applications in environmental monitoring, medical diagnostics ...
Muhammad Ali Butt +2 more
wiley +1 more source
III-V Heterostructure Nanowire Tunnel FETs
IEEE Journal of the Electron Devices Society, 2015 In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate the on- and off-current levels of nanowire TFETs with staggered source ...
Erik Lind +3 more
doaj +1 more source