Results 51 to 60 of about 37,714 (225)
III-V Heterostructure Nanowire Tunnel FETs
IEEE Journal of the Electron Devices Society, 2015 In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate the on- and off-current levels of nanowire TFETs with staggered source ...
Erik Lind +3 more
doaj +1 more source
Atomic hydrogen cleaning of GaSb(001) surfaces [PDF]
, 1996 We show that the (001) surface of GaSb can be cleaned efficiently by exposure to atomic hydrogen at substrate temperatures in the range 400–470 °C. This treatment removes carbon and oxygen contamination, leaving a clean, ordered surface with a symmetric (
Bell, Gavin R. +1 more
core +1 more source
Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors [PDF]
Infrared physics & technology, 2018 This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been explored during
M. Delmas +4 more
semanticscholar +1 more source
Nanoscale Ripples at the Surface of SrTiO3 Irradiated by a Broad Low‐Energy Ar+ (7 keV) Ion Beam
Small, EarlyView.Broad Ar ion beam irradiation creates self‐organized ripple nanostructures on oxide surfaces. A schematic illustrates the process, while cross‐sectional STEM imaging captures the ripple morphology. Complementary elemental mapping by EELS highlights nanoscale chemical variations, linking ion‐beam nanostructuring with structural and compositional ...
Mohammad S. Jamal +9 more
wiley +1 more source
Ultrafast Spin Dynamics in GaAs/GaSb/InAs Heterostructures Probed by Second Harmonic Generation
, 2001 We report the first application of pump-probe second harmonic generation (SHG) measurements to characterize optically-induced magnetization in non-magnetic multilayer semiconductors.
Furdyna, J. K. +6 more
core +1 more source
Growth and characteristics of type-II InAs/GaSb superlattice-based detectors [PDF]
, 2011 We report on growth and device performance of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices (SLs) using the complementary barrier infrared detector (CBIRD) design.
Gunapala, S. D. +7 more
core +1 more source
Abacus, EarlyView.Relevance and faithful representation are identified by standard‐setters as fundamental qualitative characteristics for useful accounting information. We critically assess whether current pension measurement guidance under International Financial Reporting Standards (IFRS) and US generally accepted accounting principles (GAAP) results in pension ...
Divya Anantharaman, Darren Henderson
wiley +1 more source
, 2007 We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface of GaSb ...
A. Wood +9 more
core +1 more source
New negative differential resistance device based on resonant interband tunneling [PDF]
, 1989 We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band ...
Chow, D. H. +2 more
core +1 more source
Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer
Solar Energy Materials and Solar Cells, 2019 The increasing number of subcells in multi-junction structures imposes the use of narrow bandgaps for a full harvesting of the solar spectrum. In this context, gallium antimonide (GaSb) and its lattice-matched alloys offer a great potential.
S. Parola +8 more
semanticscholar +1 more source