Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides [PDF]
Light: Science & Applications, 2023 Silicon (Si) photonics has recently emerged as a key enabling technology in many application fields thanks to the mature Si process technology, the large silicon wafer size, and promising Si optical properties.
Andres Remis +10 more
doaj +3 more sources
Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy. [PDF]
Materials (Basel), 2023 We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF.
Marchewka M +7 more
europepmc +2 more sources
Characterization of carriers in GaSb∕InAs superlattice grown on conductive GaSb substrate [PDF]
Applied Physics Letters, 2008 We report on mobility spectrum analysis of electrical transport in a GaSb∕InAs superlattice (SL) grown on GaSb substrate. Despite domineering contribution to conduction from the substrate, it was possible to discern and characterize carriers from SL. A single electron specie with an ambient temperature mobility of ∼104cm2∕Vs was found to emanate from ...
T. V. Chandrasekhar Rao +5 more
openaire +2 more sources
The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
Photonics, 2023 Type-II superlattices (T2SLs) are emerging as next-generation materials for infrared detectors. The epitaxial quality of T2SLs is of great importance to the performance of infrared detectors such as dark current and detectivity.
Jiabo Liu +11 more
doaj +2 more sources
High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate [PDF]
Applied Physics Letters, 2015 We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm2/Vs at sheet charge density of 8 × 1011 cm−2 and approaching 100 000 cm2/Vs near the charge neutrality point.
Binh-Minh Nguyen +4 more
openaire +3 more sources
In-situ Reflectance Monitoring of GaSb Substrate Oxide Desorption [PDF]
Journal of Crystal Growth, 2000 The use of specular reflectance to monitor GaSb substrate oxide desorption in-situ is reported. Substrates were loaded into the organometallic vapor phase epitaxy reactor either as-received (epi-ready) or after receiving a solvent degrease, acid etch and rinse. A variety of surface preparations and anneal conditions were investigated.
Vineis, C.J., Wang, C.A., Jensen, K.F.
semanticscholar +4 more sources
Insight into pressure effect on optoelectronic, mechanical, and lattice vibrational properties of nanostructured GaxIn1 − xPySbzAs1 − y − z for the solar cells system [PDF]
Scientific Reports, 2023 The electronic, optical, and elastic characteristics of the GaxIn1 − xPySbzAs1 − y − z alloy lattice matched to the GaSb substrate using a pseudo-potential formalism (EPM) based on the virtual crystal approximation (VCA) are performed.
E. B. Elkenany +2 more
doaj +2 more sources
Extended Shortwave Infrared T2SL Detector Based on AlAsSb/GaSb Barrier Optimization [PDF]
MicromachinesExtended shortwave infrared (eSWIR) detectors operating at high temperatures are widely utilized in planetary science. A high-performance eSWIR based on pBin InAs/GaSb/AlSb type-II superlattice (T2SL) grown on a GaSb substrate is demonstrated.
Jing Yu +5 more
doaj +2 more sources
Investigation of GaSb Microislands Deposited on Si Substrates with Ag Nanoparticles. [PDF]
ACS OmegaWe report our investigation of GaSb islands grown on Si substrates using the thermal evaporation method with Ag nanoparticles as catalysts. The size of the structures was determined via atomic force microscopy and scanning electron microscopy. GaSb islands, with an average size of 1.37 ± 1 μm, were formed at an evaporation temperature of 800 °C.
Donchev V +7 more
europepmc +4 more sources
Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature [PDF]
SensorsThis paper presents a theoretical analysis of npBp infrared (IR) barrier avalanche photodiode (APD) performance operating at 300 K based on a quaternary compound made of AIIIBV—InGaAsSb, lattice-matched to the GaSb substrate with a p-type barrier made of
Tetiana Manyk +5 more
doaj +2 more sources