The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
Photonics, 2023 Type-II superlattices (T2SLs) are emerging as next-generation materials for infrared detectors. The epitaxial quality of T2SLs is of great importance to the performance of infrared detectors such as dark current and detectivity.
Jiabo Liu +11 more
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Insight into pressure effect on optoelectronic, mechanical, and lattice vibrational properties of nanostructured GaxIn1 − xPySbzAs1 − y − z for the solar cells system [PDF]
Scientific Reports, 2023 The electronic, optical, and elastic characteristics of the GaxIn1 − xPySbzAs1 − y − z alloy lattice matched to the GaSb substrate using a pseudo-potential formalism (EPM) based on the virtual crystal approximation (VCA) are performed.
E. B. Elkenany +2 more
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Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform [PDF]
Scientific Reports, 2022 At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial ...
D. C. M. Kwan +7 more
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Extended Shortwave Infrared T2SL Detector Based on AlAsSb/GaSb Barrier Optimization [PDF]
MicromachinesExtended shortwave infrared (eSWIR) detectors operating at high temperatures are widely utilized in planetary science. A high-performance eSWIR based on pBin InAs/GaSb/AlSb type-II superlattice (T2SL) grown on a GaSb substrate is demonstrated.
Jing Yu +5 more
doaj +2 more sources
Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides [PDF]
Light: Science & Applications, 2023 Silicon (Si) photonics has recently emerged as a key enabling technology in many application fields thanks to the mature Si process technology, the large silicon wafer size, and promising Si optical properties.
Andres Remis +10 more
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Investigation of GaSb Microislands Deposited on Si Substrates with Ag Nanoparticles. [PDF]
ACS OmegaWe report our investigation of GaSb islands grown on Si substrates using the thermal evaporation method with Ag nanoparticles as catalysts. The size of the structures was determined via atomic force microscopy and scanning electron microscopy. GaSb islands, with an average size of 1.37 ± 1 μm, were formed at an evaporation temperature of 800 °C.
Donchev V +7 more
europepmc +4 more sources
Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature [PDF]
SensorsThis paper presents a theoretical analysis of npBp infrared (IR) barrier avalanche photodiode (APD) performance operating at 300 K based on a quaternary compound made of AIIIBV—InGaAsSb, lattice-matched to the GaSb substrate with a p-type barrier made of
Tetiana Manyk +5 more
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Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality
Frontiers in Materials, 2021 Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth via molecular beam epitaxy. A significant aspect that inhibits the widespread application of infrared plane-array detector growth on GaSb is the starting substrate ...
Bing Yan +6 more
doaj +1 more source
Photonics, 2021 We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy
Arash Dehzangi +2 more
doaj +1 more source
Characterization of carriers in GaSb∕InAs superlattice grown on conductive GaSb substrate [PDF]
Applied Physics Letters, 2008 We report on mobility spectrum analysis of electrical transport in a GaSb∕InAs superlattice (SL) grown on GaSb substrate. Despite domineering contribution to conduction from the substrate, it was possible to discern and characterize carriers from SL. A single electron specie with an ambient temperature mobility of ∼104cm2∕Vs was found to emanate from ...
T. V. Chandrasekhar Rao +5 more
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