Results 11 to 20 of about 6,152 (186)
Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy. [PDF]
Adv MaterSNOM imaging and spectroscopy on a mechanically cleaved facet is used to characterize the different layers of complex epitaxial heterostructures composed of a type II superlattice and highly doped semiconductors. Both the geometrical parameters of the stack and the optical properties of the individual layers and of the interfaces are retrieved, as well
Tailpied L +8 more
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Strain mapping in interband cascade lasers
AIP Advances, 2022 A typical interband cascade laser wafer contains more than 2000 multilayers composed of InAs, AlSb, GaSb, and GaInSb. The lattice constants of the three materials except GaSb have a certain degree of mismatch with the GaSb substrate. Therefore, to grow a
Tian Yu +11 more
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Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates [PDF]
Materials Research, 2017 This work presents the characterization of ZnTe nanolayers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes ...
Roberto Saúl Castillo-Ojeda +6 more
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Molecular beam epitaxial growth and electronic transport of GaInSb/GaSb (111) quantum wells
AIP Advances, 2022 We report on the epitaxial growth of antimony-based GaSb/Ga1−xInxSb/GaSb quantum wells (QWs) on the (111) plane. Different from the more common (001) heterostructures, (111) structures offer certain advantages in electronic properties, such as the ...
Siqi Yao, Yu-jiang Dong, Rui-Rui Du
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Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2022 The cost of thermophotovoltaic converters can be reduced by making substrates of amorphous materials, which do not have an orienting effect, such as glass or fused quartz, for obtaining thin polycrystalline GaSb layers.
Yevgen Bahanov +3 more
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Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE [PDF]
2008 20th International Conference on Indium Phosphide and Related Materials, 2008 We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.
Astromskas, Gvidas +3 more
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Applied Sciences, 2022 In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate.
Maxime Bouschet +6 more
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Study of interface asymmetry in InAs–GaSb heterojunctions [PDF]
, 1995 We present reflection high energy electron diffraction, secondary ion mass spectroscopy, scanning tunneling microscopy and x‐ray photoelectron spectroscopy studies of the abruptness of InAs–GaSb interfaces.
Collins, D. A. +4 more
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Lateral Epitaxial Overgrowth of GaSb on GaAs and GaSb Substrates
Microscopy and Microanalysis, 2000 Abstract Lateral epitaxial overgrowth (LEO) technique has recently been used to improve the quality of semiconductor layers grown on a substrate. Previous studies with GaN grown on sapphire showed a significant reduction in dislocation density in LEO layers.
C K Inoki +5 more
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Transverse-Electric Cherenkov Radiation for TeV-Scale Particle Detection. [PDF]
Adv Sci (Weinh)Finite refractive indices of naturally existing materials place a fundamental ceiling on the momentum of detectable particles in traditional Cherenkov detectors. This work demonstrates transverse‐electric graphene plasmon Cherenkov radiation, breaking the momentum barrier for particle detection beyond the TeV scale with exceptional robustness and ...
Xie Z +5 more
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