Results 11 to 20 of about 2,109,434 (243)
Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy. [PDF]
Adv MaterSNOM imaging and spectroscopy on a mechanically cleaved facet is used to characterize the different layers of complex epitaxial heterostructures composed of a type II superlattice and highly doped semiconductors. Both the geometrical parameters of the stack and the optical properties of the individual layers and of the interfaces are retrieved, as well
Tailpied L +8 more
europepmc +2 more sources
Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality
Frontiers in Materials, 2021 Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth via molecular beam epitaxy. A significant aspect that inhibits the widespread application of infrared plane-array detector growth on GaSb is the starting substrate ...
Bing Yan +6 more
doaj +1 more source
Photonics, 2021 We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy
Arash Dehzangi +2 more
doaj +1 more source
Scientific Reports, 2022 At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial ...
D. C. M. Kwan +7 more
doaj +1 more source
Strain mapping in interband cascade lasers
AIP Advances, 2022 A typical interband cascade laser wafer contains more than 2000 multilayers composed of InAs, AlSb, GaSb, and GaInSb. The lattice constants of the three materials except GaSb have a certain degree of mismatch with the GaSb substrate. Therefore, to grow a
Tian Yu +11 more
doaj +1 more source
Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates [PDF]
Materials Research, 2017 This work presents the characterization of ZnTe nanolayers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes ...
Roberto Saúl Castillo-Ojeda +6 more
doaj +1 more source
Molecular beam epitaxial growth and electronic transport of GaInSb/GaSb (111) quantum wells
AIP Advances, 2022 We report on the epitaxial growth of antimony-based GaSb/Ga1−xInxSb/GaSb quantum wells (QWs) on the (111) plane. Different from the more common (001) heterostructures, (111) structures offer certain advantages in electronic properties, such as the ...
Siqi Yao, Yu-jiang Dong, Rui-Rui Du
doaj +1 more source
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2022 The cost of thermophotovoltaic converters can be reduced by making substrates of amorphous materials, which do not have an orienting effect, such as glass or fused quartz, for obtaining thin polycrystalline GaSb layers.
Yevgen Bahanov +3 more
doaj +1 more source
Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE [PDF]
2008 20th International Conference on Indium Phosphide and Related Materials, 2008 We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.
Astromskas, Gvidas +3 more
openaire +3 more sources
Applied Sciences, 2022 In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate.
Maxime Bouschet +6 more
doaj +1 more source