Type II superlattices for infrared detectors and devices [PDF]
, 1991 Superlattices consisting of combinations of III-V semiconductors with type II band alignments are of interest for infrared applications because their energy gaps can be made smaller than those of any 'natural' III-V compounds.
Chow, D. H. +4 more
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Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers [PDF]
, 1998 Due to its large band gap, AlSb is often used as a barrier in antimonide heterostructure devices. However, its transport characteristics are not totally clear. We have employed ballistic electron emission microscopy (BEEM) to directly probe AlSb barriers
Cheng, X.-C., McGill, T. C.
core +1 more source
Tunnel switch diode based on AlSb/GaSb heterojunctions [PDF]
, 2000 We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system.
Barton, M. A. +4 more
core +1 more source
Preepitaxial substrate treatment of GaSb for liquid phase technology homoepitaxial growth [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008 The results of investigation to find out the optimal conditions of preepitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
Andronova О. V., Kurak V. V.
doaj
GaSb-based integrated lasers and photodetectors on a silicon-on-insulator waveguide circuit for sensing applications in the shortwave infrared [PDF]
, 2012 We report our results on GaSb photodiodes and lasers integrated on a Silicon-On-Insulator waveguide circuit. The photodiodes operate at room temperature with 0.4A/W responsivity for grating-assisted coupling and >1 A/W for an evanescent design.
Cerutti, L +5 more
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East European Journal of Physics, 2023 The paper studies the properties of surface and near-surface region of a single crystalline silicon sample doped with atoms of Ga (AIII) and Sb (BV). n-type single-crystal Si wafers were chosen as substrates, and samples were size of 8×10×0.5 mm3.
Xalmurat M. Iliyev +7 more
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Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films [PDF]
, 2019 Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure.
Brown-Heft, Tobias L. +12 more
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AIP Advances, 2015 Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to ...
W. C. Mitchel +5 more
doaj +1 more source
Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers
AIP Advances, 2021 We report on the growth of an InAs0.32Sb0.68 layer on (001) GaAs substrates. The lattice mismatch strain between the InAs0.32Sb0.68 layer and the GaAs substrate was accommodated using a thin 50–100 nm Ga0.35In0.65Sb buffer with interfacial misfit (IMF ...
Kian Hua Tan +3 more
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Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array
IEEE Access, 2021 High-performance InAs/GaSb type-II superlattice infrared detectors and focal plane arrays (FPAs) are normally grown by molecular beam epitaxy (MBE).
Yan Teng +11 more
doaj +1 more source