Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes. . [PDF]
, 2007 Room temperature electroluminescence in the midinfrared near 4 µm is reported from GaInAsSbP light emitting diodes grown on GaSb by liquid phase epitaxy.
Batty, P. J. +5 more
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GaSb-based integrated lasers and photodetectors on a silicon-on-insulator waveguide circuit for sensing applications in the shortwave infrared [PDF]
, 2012 We report our results on GaSb photodiodes and lasers integrated on a Silicon-On-Insulator waveguide circuit. The photodiodes operate at room temperature with 0.4A/W responsivity for grating-assisted coupling and >1 A/W for an evanescent design.
Cerutti, L +5 more
core +1 more source
East European Journal of Physics, 2023 The paper studies the properties of surface and near-surface region of a single crystalline silicon sample doped with atoms of Ga (AIII) and Sb (BV). n-type single-crystal Si wafers were chosen as substrates, and samples were size of 8×10×0.5 mm3.
Xalmurat M. Iliyev +7 more
doaj +1 more source
Nano-porosity in GaSb induced by swift heavy ion irradiation [PDF]
, 2016 Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime.
Afra, B +12 more
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High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate
Applied Physics Letters, 2015 We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm2/Vs at sheet charge density of 8 × 1011 cm−2 and approaching 100 000 cm2/Vs near the charge neutrality point.
Binh-Minh Nguyen +4 more
openaire +2 more sources
AIP Advances, 2015 Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to ...
W. C. Mitchel +5 more
doaj +1 more source
Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers
AIP Advances, 2021 We report on the growth of an InAs0.32Sb0.68 layer on (001) GaAs substrates. The lattice mismatch strain between the InAs0.32Sb0.68 layer and the GaAs substrate was accommodated using a thin 50–100 nm Ga0.35In0.65Sb buffer with interfacial misfit (IMF ...
Kian Hua Tan +3 more
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Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array
IEEE Access, 2021 High-performance InAs/GaSb type-II superlattice infrared detectors and focal plane arrays (FPAs) are normally grown by molecular beam epitaxy (MBE).
Yan Teng +11 more
doaj +1 more source
Multispectral mid-infrared light emitting diodes on a GaAs substrate [PDF]
, 2017 We have designed, simulated, and experimentally demonstrated four-colour mid-infrared (mid-IR) Light Emitting Diodes (LEDs) integrated monolithically into a vertical structure on a semi-insulating GaAs substrate.
Aziz, Mohsin +6 more
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Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films [PDF]
, 2019 Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure.
Brown-Heft, Tobias L. +12 more
core +3 more sources