Results 81 to 90 of about 2,109,434 (243)

Perfect Andreev Reflection of Helical Edge Modes in InAs/GaSb Quantum Wells

, 2011
We present an experimental study of inverted InAs/GaSb composite quantum wells in the hybridization regime and contacted by superconducting electrodes.
A. F. Andreev, Gerard Sullivan, Ivan Knez, Rui-Rui Du   +3 more
core   +1 more source

Enhanced THz Emission and Exciton Transfer in Monolayer MoS2/GaAs Heterostructures

Advanced Photonics Research, Volume 7, Issue 1, January 2026.
This study demonstrates enhanced terahertz (THz) emission from a hybrid structure combining monolayer MoS2 with low‐temperature‐grown GaAs. The mixed‐dimensional van der Waals heterostructure shows a 15% increase in THz output and improved optical conductivity, driven by efficient exciton transfer and nonlinear optical effects, offering a new route for
C. Abinash Bhuyan, Anil K. Chaudhary, Kishore K. Madapu, P. Naveen Kumar, Sandip Dhara   +4 more
wiley   +1 more source

Lithium and Vanadium Intercalation into Bilayer V2Se2O: Ferrimagnetic–Ferroelastic Multiferroics and Anomalous and Spin Transport

Advanced Science, Volume 13, Issue 5, 27 January 2026.
Li‐ and V‐intercalated V2Se2O bilayers possess intralayer ferrimagnetic and interlayer ferromagnetic orders, alongside ferroelasticity, in‐plane uniaxial magnetic anisotropy, half‐metal/enhanced spin splitting, the anomalous Hall effect, giant magnetoresistance, tunneling magnetoresistance, near‐perfect spin filtering effect, spin Seebeck effect, and ...
Long Zhang, Yuxin Liu, Junfeng Ren, Guangqian Ding, Xiaotian Wang, Guangxin Ni, Guoying Gao, Zhenxiang Cheng   +7 more
wiley   +1 more source

Transverse‐Electric Cherenkov Radiation for TeV‐Scale Particle Detection

Advanced Science, Volume 13, Issue 1, 5 January 2026.
Finite refractive indices of naturally existing materials place a fundamental ceiling on the momentum of detectable particles in traditional Cherenkov detectors. This work demonstrates transverse‐electric graphene plasmon Cherenkov radiation, breaking the momentum barrier for particle detection beyond the TeV scale with exceptional robustness and ...
Zhixiong Xie, Xiao Lin, Song Zhu, Chunyu Huang, Yu Luo, Hao Hu   +5 more
wiley   +1 more source

Structural anisotropy in Sb thin films

APL Materials
Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties.
Pradip Adhikari, Anuradha Wijesinghe, Anjali Rathore, Timothy Jinsoo Yoo, Gyehyeon Kim, Sinchul Yeom, Hyoung-Taek Lee, Alessandro R. Mazza, Changhee Sohn, Hyeong-Ryeol Park, Mina Yoon, Matthew Brahlek, Honggyu Kim, Joon Sue Lee   +13 more
doaj   +1 more source

Improved Electron Transport Properties in InSb/Ga0.22In0.78Sb Composite Channel HEMT Structures

physica status solidi (a), Volume 223, Issue 2, January 2026.
The effectiveness of double‐sided Te δ‐doping and engineered buffer structure consisting of GaSb buffer and AlInSb‐graded buffer is investigated in InSb/Ga0.22In0.78 Sb composite channel HEMTs. The degree of threading dislocation suppression is quantitatively analyzed using a pair‐annihilation model.
Tatsuhisa Oba, Tomoki Jinnai, Reo Ebihara, Wataru Nakajima, Ryuto Machida, Issei Watanabe, Yoshimi Yamashita, Shinsuke Hara, Akifumi Kasamatsu, Akira Endoh, Hiroki I. Fujishiro   +10 more
wiley   +1 more source

Electron Channeling Contrast Imaging for the Characterization of Dislocations in III−V Thin Films on Silicon (001)

physica status solidi (a), Volume 223, Issue 2, January 2026.
Defect characterization plays a crucial role in semiconductor research, yet the development of fast, cheap, and nondestructive tools remains challenging. This work applies electron channeling contrast imaging (ECCI) to III–V thin films on silicon, examining beam parameters and diffraction conditions.
Laura Monge‐Bartolome, Paula Mouriño Miñambres, Alicia Peiro Codoñer, Miguel Sinusia Lozano, Zhao Yan, Ivan Garcia Vara, Thierry Baron, Qiang Li, Víctor J. Gómez   +8 more
wiley   +1 more source

Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Advanced Physics Research
The monolithic integration of III‐Vs on Silicon (Si) is of great interest for the development of active photonic integrated circuits (PICs). The main challenge is to achieve a high‐quality epitaxy of the III‐V on the Si substrate, as the differences ...
A. Gilbert, M. Ramonda, G. Patriarche, E. Tournié, J.‐B. Rodriguez   +4 more
doaj   +1 more source

External luminescence and photon recycling in near-field thermophotovoltaics

, 2017
The importance of considering near-field effects on photon recycling and spontaneous emission in a thermophotovoltaic device is investigated. Fluctuational electrodynamics is used to calculate external luminescence from a photovoltaic cell as a function ...
DeSutter, John, Francoeur, Mathieu, Vaillon, Rodolphe   +2 more
core   +3 more sources

Mid‐Infrared Free‐Space Optical Communications: Technologies, Demonstrations and Future Directions

IET Optoelectronics, Volume 20, Issue 1, January/December 2026.
Free‐space optical (FSO) communication is increasingly extending beyond the near‐infrared to the mid‐wave infrared (MWIR) and long‐wave infrared (LWIR) regions, which offer reduced turbulence, scattering and absorption for more robust links. This review summarises recent advances in MWIR/LWIR FSO technologies, including quantum cascade lasers, lithium ...
Darja Cirjulina, Zhuoyan Zhang, Abdul Hayee, Armands Ostrovskis, Richard Schatz, Hamza Dely, Yan‐Ting Sun, Toms Salgals, Sandis Spolitis, Vjaceslavs Bobrovs, Lu Zhang, Djamal Gacemi, Angela Vasanelli, Carlo Sirtori, Xianbin Yu, Oskars Ozolins, Xiaodan Pang   +16 more
wiley   +1 more source