Results 131 to 140 of about 85,724 (295)

Low cost si nanowire biosensors by recrystallisation technologies [PDF]

, 2011
EThOS - Electronic Theses Online ServiceGBUnited ...
Sun, Kai
core  

Optimize Gate-All-Around Devices Using Wide Neural Network-Enhanced Bayesian Optimization

IEEE Journal of the Electron Devices Society
Device design processes based on manual design experience require numerous experiments and simulations. As transistors continue to shrink, complex physical effects, such as quantum effects intensify, making the design process increasingly costly, whether
Jiaye Shen, Zhiqiang Li, Zhenjie Yao
doaj   +1 more source

Role of the Recombination Zone in Organic Light‐Emitting Devices

Advanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source

Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs

IEEE Journal of the Electron Devices Society
A closed-form, analytical, and unified model for the surface potential from source to drain in nanowire (NW) gate-all-around (GAA) tunneling field effect transistors (TFETs) is proposed and validated.
Zhanhang Chen, Haoliang Shan, Ziyi Ding, Xia Wu, Xiaolin Cen, Xiaoyu Ma, Wanling Deng, Junkai Huang   +7 more
doaj   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Stable Protein‐Based G‐Quadruplex‐Derived Supramolecular Bioinks as Tunable ECM‐Mimetic Constructs Assembled by Combining Non‐Covalent and Covalent Strategies

Advanced Materials, EarlyView.
Harnessing the synergistic interplay of supramolecular self‐assembly, under macromolecular crowding conditions, and enzymatic‐mediated covalent crosslinking toward a stable protein‐based G‐quadruplex‐derived supramolecular bioink. This bioinspired strategy enables the biofabrication of complex and tunable ECM‐mimetic constructs, providing a platform ...
Vera Sousa, Rita Sobreiro‐Almeida, Bart W. L. van den Bersselaar, E. W. Meijer, Ghislaine Vantomme, João Borges, João F. Mano   +6 more
wiley   +1 more source

Thermal‐Driven Diode Polarity Switching From Competing Helical Superconducting States in WTe2/α‐Fe2O3 Heterostructures

Advanced Materials, EarlyView.
A Nb‐proximitized Josephson junction based on a WTe2/α‐Fe2O3 heterostructure exhibits a robust superconducting diode effect with programmable polarity. The diode direction can be trained by magnetic fields and switched by temperature cycling, revealing tunable finite‐momentum pairing states and competing superconducting states in symmetry‐broken ...
Enze Zhang, Grant Z. X. Yang, Zi‐Ting Sun, Xinhou Chen, Shishun Zhao, Chufan Chen, Chenhui Zhang, Fanrui Hu, K. T. Law, Hyunsoo Yang   +9 more
wiley   +1 more source

Correlated Charge Transport in an Organic Coulomb Glass

Advanced Materials, EarlyView.
ABSTRACT Advances in the development of organic field‐effect transistors (OFETs), electrically gated organic semiconductors (EGOFETs), and organic electrochemical transistors (OECTs) allow for the operation of these devices at very high charge‐carrier densities, where Coulomb interactions between carriers can be expected to become significant.
Magdalena Sophie Dörfler, Heinz Bässler, Harald Oberhofer, Anna Köhler   +3 more
wiley   +1 more source

A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors. [PDF]

Micromachines (Basel), 2023
Yang J, Huang Z, Wang D, Liu T, Sun X, Qian L, Pan Z, Xu S, Wang C, Wu C, Xu M, Zhang DW.   +11 more
europepmc   +1 more source

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

Advanced Materials, EarlyView.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh, PeiYu Cai, Elton J. G. Santos   +2 more
wiley   +1 more source