Photo‐ and Thermally‐Induced Huge Layer Decoupling in Twisted Bilayer WSe2
Advanced Materials, EarlyView.A newly developed automated dark‐field tomography visualizes twist‐angle‐dependent structural relaxation and quantifies 3D structures in twisted bilayer WSe2. This approach reveals the evolution of local stacking configurations, thermally induced sub‐ångström interlayer decoupling, and light‐driven interlayer expansion on picosecond timescales ...
A. Nakamura +10 more
wiley +1 more source
Gate-all-around junctionless FET based label-free dielectric/charge modulation detection of SARS-CoV-2 virus. [PDF]
RSC Adv, 2022 Priyadarshani KN, Singh S, Mohammed MKA.
europepmc +1 more source
Reconfigurable Ferroelectric‐Like Two‐Dimensional Electron Gas at Room Temperature
Advanced Materials, EarlyView.We demonstrate the realization of a novel ferroelectric‐like two‐dimensional electron gas (2DEG) based on the epitaxial interface between SrO‐terminate SrTiO3 and ferroeletric KNb0.5Na0.5O3${\rm KNb}_{0.5}{\rm Na}_{0.5}{\rm O}_3$ thin films. We show nonvolatile control of the transport properties enabling spatially reconfigurable devices in which ...
Martando Rath +16 more
wiley +1 more source
Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects. [PDF]
Nanomaterials (Basel)Yugender P +6 more
europepmc +1 more source
Intrinsically Stretchable Piezoelectric Nanocomposites for Artificial Ultrasonic Sensory Synapse
Advanced Materials, EarlyView.Applying ultrasonic stimulations to a soft‐stretchable underwater piezoelectric sensor based on the soft‐stretchable nanocomposite from the thermal cross‐linking between the ─C─F group of P(VDF‐TrFE) and the ─NH2 group of (PEG‐diamine) with incorporating amine‐terminated BTO@APTES nanofillers on the soft PDMS substrates generated high piezoelectric ...
Trung Dieu Do +11 more
wiley +1 more source
Remote Plasma Selective Silicon Etching Enabled Tunable Sub-Fin Process for Improved Parasitic Bottom Channel Control in Gate-All-Around Nanosheet Field-Effect Transistors. [PDF]
Nanomaterials (Basel)Li J, Gao Y, Zhang DW.
europepmc +1 more source
Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice. [PDF]
Nanomaterials (Basel), 2021 Xie L +13 more
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Advanced Materials Interfaces, EarlyView.A controlled layer‐by‐layer growth process integrates conjugated metal‐organic framework thin films onto a hierarchical 3D laser‐induced graphene scaffold. When incorporated into an extended‐gate field‐effect transistor configuration, this synergistic hybrid platform achieves robust aptamer immobilization, driving highly selective, picomolar‐level ...
Khanh T. M. Le +2 more
wiley +1 more source
Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM. [PDF]
Discov NanoBae SJ +9 more
europepmc +1 more source
Light Switchable Ionic Conductivity of Arylazopyrazole Modified Polysiloxanes
Advanced Materials Technologies, EarlyView.We present a polysiloxane functionalized with a novel arylazopyrazole dye that undergoes reversible photoisomerization. Upon lithium bis(trifluoromethanesulfonyl)imide addition and UV irradiation, the polymer exhibits a shift in tan(d) toward higher frequencies and enhanced ionic conductivity.
Malte S. Beccard +7 more
wiley +1 more source