Results 191 to 200 of about 85,724 (295)

Artificial Synaptic Device Based on Self‐Aligned c‐In2O3 TFTs With an Ultrathin MgO Interlayer

Advanced Materials Technologies, EarlyView.
A coplanar synaptic thin‐film transistor based on crystalline In2O3 is demonstrated using a PECVD SiO2 gate insulator and an ultrathin MgO interlayer. The MgO interlayer suppresses excessive carrier density and may facilitate proton‐related interfacial polarization, resulting in stable counterclockwise hysteresis and synaptic behavior.
Samiran Roy, Jewel Kumer Saha, Jin Jang
wiley   +1 more source

InP Crystal Phase Heterojunction Transistor with a Vertical Gate-All-Around Structure. [PDF]

ACS Appl Mater Interfaces
Katsumi Y, Gamo H, Motohisa J, Tomioka K.   +3 more
europepmc   +1 more source

In Situ Integrated Titanium Oxide Synaptic Phototransistor Enabling Multimodal Plasticity and Noise‐Robust Selective Attention

Advanced Materials Technologies, EarlyView.
An in situ integrated TiO2/SiOx/Al2O3 synaptic phototransistor couples ultraviolet and electrical stimuli within a scalable, CMOS‐compatible oxide stack. Multimodal plasticity, spike‐timing‐dependent learning, and bee‐inspired associative conditioning are achieved through trap‐mediated temporal dynamics.
Youngbin Yoon, Jaehee Lee, Jeongwook Kwon, Yongki Kim, Myunghun Shin, Jung Wook Lim   +5 more
wiley   +1 more source

Logic Gates Based on 3D Vertical Junctionless Gate-All-Around Transistors with Reliable Multilevel Contact Engineering. [PDF]

Nano Lett
Kumar A, Müller J, Pelloquin S, Lecestre A, Larrieu G.   +4 more
europepmc   +1 more source

Unveiling the Hidden Geometry of OECTs: Contact‐Semiconductor Overlap Driven Errors in Volumetric Capacitance

Advanced Materials Technologies, EarlyView.
This work examines how contact–semiconductor overlap influences volumetric capacitance extraction in organic electrochemical transistors as device dimensions shrink. It shows that neglecting overlap leads to systematic, geometry‐driven errors in capacitance values.
Renan Colucci, Marcos Luginieski, Germán D. Gómez Higuita, Gerwin Dijk, Bianca de A. Feitosa, Yaakov Tuchman, Alberto Salleo, Gregório Couto Faria   +7 more
wiley   +1 more source

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. [PDF]

Micromachines (Basel)
Yugender P, Dhar RS, Nanda S, Kumar K, Sakthivel P, Thirumurugan A.   +5 more
europepmc   +1 more source

Deep‐Tissue Light Generation via Whispering Gallery Mode Lasing From a Commercial Nylon Fiber for Biomedical Applications

Advanced Materials Technologies, EarlyView.
A dyed nylon fiber is implemented inside the scattering phantom and skin tissue. The deep‐tissue light generation via whispering gallery mode lasing is demonstrated, achieving a depth of >50 times transport mean free path in scattering phantom and 3 mm beneath skin.
Dongqin Ni, Florian Klämpfl, Fernando Lahoz, Michael Schmidt, Martin Hohmann   +4 more
wiley   +1 more source

Super High-k Dielectric via Composition-Dependent Hafnium Zirconium Oxide Superlattice for Si Nanosheet Gate-All-Around Field-Effect Transistors with NH₃ Plasma-Optimized Interfaces. [PDF]

Materials (Basel)
Yao YJ, Fu YM, Chen YH, Wei CY, Huang KT, Luo GL, Hou FJ, Lai YS, Wu YC.   +8 more
europepmc   +1 more source

Engineering Energy Harvesting Pathways in Mn‐Yb‐Doped Perovskite Nanocrystals

Advanced Optical Materials, EarlyView.
Mn‐Yb codoping in metal halide perovskite nanocrystals establishes dual‐channel energy reservoirs that capture charge carriers and drip‐feed them back to the host on millisecond timescales. This synergistic recycling mechanism overcomes prompt nanosecond recombination limitations, enabling an eight‐fold enhancement in photocatalytic CO2​ reduction ...
Manoj Sharma, Chang Cao, Pria Ramkissoon, Hanchen Li, Nadine J. Schrenker, Naufan Nurrosyid, Anthony S. R. Chesman, Junhong Yu, Joanne Etheridge, Trevor A. Smith, Akshat Tanksale, Jacek. J. Jasieniak   +11 more
wiley   +1 more source

Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network. [PDF]

Micromachines (Basel)
Zhao Y, Xu Z, Tang H, Zhao Y, Tang P, Ding R, Zhu X, Zhang DW, Yu S.   +8 more
europepmc   +1 more source