Recent progress in HfO<sub>2</sub>-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]
Nanoscale AdvKang HY +4 more
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From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]
Nanomaterials (Basel)Petkov N, Fagas G.
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Scalable Ising machine composed entirely of Si transistors. [PDF]
Sci AdvYun SY +6 more
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High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels. [PDF]
Nanomicro LettLiao W +6 more
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Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS2 Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments. [PDF]
Micromachines (Basel)Tamersit K +3 more
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Stacked Nanosheet Gate-All-Around Morphotropic Phase Boundary Field-Effect Transistors. [PDF]
Adv Sci (Weinh)Kim S, Kim HM, Kwon KR, Kwon D.
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The electrical characteristics of Nanosheet FET within the quasi-ballistic transport: Role of scattering and temperature variation. [PDF]
PLoS OneShubham, Pandey RK.
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Voltage compensation of manufacturing errors applied to artificial band gaps in nanoscale transistor. [PDF]
Sci RepAghajani A, Karsenty A.
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Correction: Hsieh et al. Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits. <i>Micromachines</i> 2020, <i>11</i>, 741. [PDF]
Micromachines (Basel)Hsieh TY +6 more
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Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS<sub>2</sub> Field Effect Transistors. [PDF]
Adv MaterLiu L +10 more
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