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Investigation and Compact Modeling for GIDL-assisted Erase Transients of Metal Gate 3D NAND Flash Memories

Semiconductor Science and Technology
Abstract This paper presents a compact model for gate-induced drain leakage (GIDL)- assisted erase transients in metal-gate 3D NAND flash memories. The proposed model incorporates key physical mechanisms, including hole injection, electron back-tunneling, and pure tunneling electron emission.
Chang Hyeok Im, Kyul Ko, Ilho Myeong
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Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings

Journal of Computational Electronics, 2019
This paper presents a physics-based compact model able to describe the time dynamics of the erase operation in three-dimensional NAND Flash strings exploiting gate-induced drain leakage at the selector to increase the string potential. The model accurately reproduces all the main phases of the erase operation and allows to calculate the threshold ...
Christian Monzio Compagnoni, Alessandro Spinelli, Gerardo Malavena   +2 more
exaly   +2 more sources

Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND

2023 IEEE International Memory Workshop (IMW), 2023
Sunghoi Hur, Jaihyuk Song, Jaehoon Jang   +2 more
exaly   +2 more sources

A Process-Aware Compact Model for GIDL-Assisted Erase Optimization of 3-D V-NAND Flash Memory

IEEE Transactions on Electron Devices, 2023
Soyoung Kim, Yohan Kim
exaly   +2 more sources

A Compact Model for GIDL-Assisted Erase Transients of 3D MONOS Charge-Trap NAND Flash Memories

2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Hyungcheol Shin
exaly   +2 more sources

Investigation of Hot Carrier Injection During GIDL Erase Operation in 3-D NAND Flash Memory

IEEE Transactions on Electron Devices
Woo Young Choi, Jin Ho Chang, Jinwook Lee   +2 more
exaly   +2 more sources

Analysis of GIDL Erase Characteristics in Vertical NAND Flash Memory

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023
Ho-Nam Yoo, Yeongheon Yang, Min-Kyu Park, Woo-Young Choi, Jong-Ho Lee   +4 more
openaire   +1 more source

Analysis of Grain Boundary Effect in GIDL-erase-scheme Vertical CTF Strings for High Stacked CMOS under Array 3-D NAND Flash

Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials, 2022
Moonkyu Song, Joe Friedman, Sanjay K. Banerjee   +2 more
openaire   +1 more source

Strategies to Improve Efficiency of Select-Gate Voltage Floating During GIDL-Assisted Erase in 3-D NAND Flash Memory

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Sungju Kim, Jaeyeop Jung, Hyungcheol Shin   +2 more
openaire   +1 more source

First Demonstration of 1-bit Erase in Vertical NAND Flash Memory

2022
Jongwon Back, Byung Park, Ho-Nam Yoo
exaly