Results 51 to 60 of about 16,309 (85)
, 2002 Using a novel gate-induced-drain-leakage (GIDL) current technique and two-dimensional (2-D) simulations, single pocket (SP) SOI MOSFETs have been shown to exhibit reduced floating body effects compared to the homogeneously-doped channel (conventional ...
VASI, J +13 more
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Mechanism of GIDL degradation induced by hot-carrier stresses in n-MOSFETs
, 1999 Degradation in Gate-Induced Drain Leakage (GIDL) of n-MOSFETs with different gate oxides under different hot-carrier stresses is investigated. It has been found that the shift of GIDL is very sensitive to gate voltage and reaches the maximum under a ...
Xu, Jingping, Lai, PT
core
Single replicate ERASE-Seq performance.
, 2018 The ERASE-Seq algorithm may also be used with single replicates to eliminate false positives resulting from recurrent artifacts. This fig demonstrates ERASE Seq’s large gains in resolution below 1% allele frequency as compared to Lofreq2, a high ...
Laurie Kurihara (5076578) +6 more
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, 2009 A soft-programming-free operation method in unified RAM (URAM) is presented. An oxide/nitride/oxide (O/N/O) layer and a floating-body are integrated in a FinFET, thereby providing the versatile functions of a high-speed capacitorless 1T-DRAM, as well as ...
Han, Jin-Woo +3 more
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Oxide-trap-induced instability in GIDL of thermally nitrided-oxide N-MOSFET's under stress
, 1992 Some holes created from band-to-band (B-B) tunneling in the deep-depletion region of the drain can be injected into the gate oxide and reduce the vertical field there. As a result, gate-induced drain leakage (GIDL) current decreases.
Lai, Pui T, Ma, ZJ, Cheng, YC
core
, 1996 Degradation in gate-induced drain leakage (GIDL) of n-MOSFETs with various kinds of gate oxides under hot-carrier stress at different gate voltages is investigated. It has been found that the shift of GIDL current is very sensitive to gate voltage and is
Xu, J, Lai, PT, Zeng, X, Cheng, YC
core +1 more source
Erase the Record follows a young immigrant as she embarks on a magical journey to unearth her vanished memories and elusive cultural identity. The film delves into the malleable nature of memory in an allegorical universe in which myth, dream, and magic ...
Noerskov, Anne Sofie
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Memory characteristics of silicon nanowire transistors generated by weak impact ionization. [PDF]
Sci Rep, 2017 Lim D, Kim M, Kim Y, Kim S.
europepmc +1 more source
Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory. [PDF]
Materials (Basel), 2010 Sakai S, Takahashi M.
europepmc +1 more source