Results 1 to 10 of about 7,647 (298)

Electric field-induced crystallization of ferroelectric hafnium zirconium oxide. [PDF]

Sci Rep, 2021
AbstractFerroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance.
Lederer M, Abdulazhanov S, Olivo R, Lehninger D, Kämpfe T, Seidel K, Eng LM.   +6 more
europepmc   +5 more sources

Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide. [PDF]

Nat Commun
AbstractA nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric materials such as BaTiO3 offer nonvolatile optical phase shift capabilities, their compatibility with ...
Taki K, Sekine N, Watanabe K, Miyatake Y, Akazawa T, Sakumoto H, Toprasertpong K, Takagi S, Takenaka M.   +8 more
europepmc   +5 more sources

A multi-timescale synaptic weight based on ferroelectric hafnium zirconium oxide. [PDF]

Commun Mater, 2023
AbstractBrain-inspired computing emerged as a forefront technology to harness the growing amount of data generated in an increasingly connected society. The complex dynamics involving short- and long-term memory are key to the undisputed performance of biological neural networks.
Halter M, Bégon-Lours L, Sousa M, Popoff Y, Drechsler U, Bragaglia V, Offrein BJ.   +6 more
europepmc   +5 more sources

Ferroelectricity and Oxide Reliability of Stacked Hafnium-Zirconium Oxide Devices. [PDF]

Materials (Basel), 2023
In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films.
Liao RY, Chen HH, Lin PY, Liang TA, Su KH, Lin IC, Wen CH, Chou WC, Hsu HH, Cheng CH.   +9 more
europepmc   +3 more sources

Self-powered photo-pyroelectric sensing in antiferroelectric Hafnium zirconium memory with asymmetric van der Waals electrodes. [PDF]

Nat Commun
Hafnium zirconium oxide with antiferroelectric polarizations holds great promise for emerging applications such as neuromorphic computing, energy-efficient storage, and nonvolatile memory, owing to its tunable phase transitions, fast switching speed ...
Gan X, Zhu L, Han J, Zuo X, Zheng C, Li W, Chu J, An Z.   +7 more
europepmc   +2 more sources

Correction: Hafnium-zirconium oxide interface models with a semiconductor and metal for ferroelectric devices. [PDF]

Nanoscale Adv, 2021
Hafnium–zirconium oxide (HZO) thin films are of interest due to their ability to form ferroelectric (FE) and antiferroelectric (AFE) oxide phases. Density functional theory is employed to elucidate the stabilization mechanisms of both FE HZO thin films and AFE ZrO2 films.
Chae K, Kummel AC, Cho K.
europepmc   +2 more sources

Laser-Induced Phase Control of Morphotropic Phase Boundary Hafnium-Zirconium Oxide. [PDF]

ACS Appl Mater Interfaces
A novel approach to delicately control the phase of a ferroelectric has been developed using a continuous-wave laser scanning annealing (CW-LSA) process. After proper process optimization, the equivalent oxide thickness (EOT) of 3.5 Å with a dielectric constant (κ) of 68 Å is achieved from HZO in a metal-ferroelectric-metal (MFM) capacitor structure ...
Kim SM, Kim M, Lee CB, Choi U, Kwon MG, Kim KS, Kim J, Hwang HJ, Lee BH.   +8 more
europepmc   +3 more sources

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

Advanced Physics Research
AbstractUltralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements. A nanoscale polycrystalline Hf0.75Zr0.25O2 (HZO) thin films on Pt/Si substrate are fabricated and investigated for suitability for bipolar resistive switching.
M. Asif, R. K. Rakshit, Ashok Kumar
openaire   +2 more sources

Phase stability of hafnium oxide and zirconium oxide on silicon substrate [PDF]

Scripta Materialia, 2007
Phase stabilities of Hf-Si-O and Zr-Si-O have been studied with first-principles and thermodynamic modeling. From the obtained thermodynamic descriptions, phase diagrams pertinent to thin film processing were calculated.
Cho, Copel, Dongwon Shin, Ellison, Fries, Gueneau, Gutowski, Hallstedt, Hubbard, Kresse, Kresse, Miyata, Perdew, Saunders, Shin, Takahashi, Takahashi, Wang, Wang, Wilk, Wolverton, Zi-Kui Liu   +21 more
core   +2 more sources

Formation and energetics of head-to-head and tail-to-tail domain walls in hafnium zirconium oxide. [PDF]

Sci Rep
180 $$^\circ$$ ∘ domains walls (DWs) of head-to-head/tail-to-tail (H–H/T–T) type in ferroelectric (FE) materials are of immense interest for a comprehensive understanding of the FE attributes as well as harnessing them for new applications.
Paul TK, Saha AK, Gupta SK.
europepmc   +2 more sources