Results 11 to 20 of about 7,647 (298)
Effect of post-metallization anneal on monolithic co-integration of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based FeFET and CMOS. [PDF]
Hafnium oxide-based ferroelectrics, particularly zirconium-doped HfO2 (HZO), have demonstrated excellent compatibility with CMOS fabrication processes. However, the impact of post-metallization annealing (PMA)—a key step in optimizing device performance ...
An J +7 more
europepmc +2 more sources
Surface scale is usually formed in the aerofoil part of as-cast nickel-based single crystal turbine blades by the strong interaction between the mould wall and the melt, and the subsequent oxidation of the fresh metallic surface of the casting.
KeeHyun Park, Paul Withey
doaj +1 more source
Thermal stability of hafnium zirconium oxide on transition metal dichalcogenides [PDF]
Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC surface leading to a high-quality and abrupt ferroelectric/TMDC interface.
Maria Gabriela Sales +5 more
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Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering
In this work, we investigate that the capping layer (CL) engineering of aluminum oxide (AlOx) on the dopant-free hafnium oxide (HfOx) and the hafnium zirconium oxide (HfZrOx) ferroelectric metal-ferroelectric-metal (MFM) capacitors. The AlOx CL featuring
Hsuan-Han Chen +5 more
doaj +1 more source
Explorative study on the antibacterial effects of 3D-printed PMMA/nitrides composites
Following the rising interested on 3D-printing technologies, this research explores the possibility to apply nitride-polymethylmethacrylate composite coatings on 3D printed parts in order to increase their resistance to bacteria colonization.
Elia Marin +5 more
doaj +1 more source
Thermal atomic layer etching (ALE) can be achieved using sequential, self-limiting fluorination and ligand-exchange reactions. Previous studies have demonstrated thermal ALE of amorphous HfO2 and ZrO2 ALD films. This study explored the differences between thermal ALE of amorphous and polycrystalline films of hafnium oxide, zirconium oxide, and hafnium ...
Jessica A. Murdzek, Steven M. George
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An experimental comparison of interface trap density in hafnium oxide-based FeFETs
In recent years, there has been significant progress in the development of high-κ materials in the semiconductor industry. Given that the contact between the channel and the electrode has a crucial impact on reliability, the selection of electrode ...
Chaiwon Woo +4 more
doaj +1 more source
Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films
Capacitors play an increasingly important role in hybrid integrated circuits, while the MIM capacitors with high capacitance density and small thickness can meet the needs of high integration.
Yaru Pan +9 more
doaj +1 more source
Carbides and Nitrides of Zirconium and Hafnium. [PDF]
Among transition metal carbides and nitrides, zirconium, and hafnium compounds are the most stable and have the highest melting temperatures. Here we review published data on phases and phase equilibria in Hf-Zr-C-N-O system, from experiment and ab ...
Hong, Qi-Jun +3 more
core +1 more source
The results of elaborating a method for the synthesis of zirconia and hafnia doped by rare earths (yttrium, erbium and scandium) by using low-hydrated hydroxides of zirconium and hafnium as precursors are reported.
E. E. Nikishina +2 more
doaj +1 more source

