Results 21 to 30 of about 7,647 (298)
Investigations of Zr(IV) in LiF-CaF2: stability with oxide ions and electroreduction pathway on inert and reactive electrodes [PDF]
In this work, a detailed electrochemical study of the molten LiF-CaF2-ZrF4 system is provided in the 810-920°C temperature range, allowing the determination of the reduction potential, the diffusion coefficient and the reduction mechanism of dissolved Zr(
Cassayre, Laurent +4 more
core +4 more sources
Ultrasensitive negative capacitance phototransistors
Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific ...
Luqi Tu +15 more
doaj +1 more source
We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits ...
Zhigang Xiao +3 more
doaj +1 more source
Nanocomposites and methods for synthesis and use thereof [PDF]
Nanocomposite compositions and methods of synthesis of the compositions are described. In particular, liquid crystal-functionalized nanoparticles, liquid crystal-templated nanoparticles, nanocomposite compositions including the nanoparticles, and ...
Furman, Benjamin R. +3 more
core +1 more source
Oxidation Resistance of Modified Aluminide Coatings
The application of protective aluminide coatings is an effective way to increase the oxidation resistance of the treated parts and prolongs their lifetime. The addition of small amount of noble metals (platinum or palladium) or reactive elements such as:
Romanowska Jolanta +2 more
doaj +1 more source
Ferroelectric fin field-effect transistors with a trench structure (trench Fe-FinFETs) were fabricated and characterized. The inclusion of the trench structures improved the electrical characteristics of the Fe-FinFETs.
Siao-Cheng Yan +5 more
doaj +1 more source
Ferroelectric field effect transistors: Progress and perspective
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration.
Jae Young Kim, Min-Ju Choi, Ho Won Jang
doaj +1 more source
Features of medical implant passivation using anodic oxide films [PDF]
The passivation ability of metals from groups IV and V of the Periodic Table is considered. Anodic treatment is able to neutralize the increase of metal hardening when comminuting grains to nanometre sizes.
Lavrynenko, S. N. +3 more
core +1 more source
This study offers new insights into the ferroelectric (FE) properties of hafnia‐zirconia (HZO)‐based capacitors across a wide temperature range‐ from room temperature (RT) to cryogenic conditions (40 K)‐ through advanced characterization techniques.
Flavien Berthaud +10 more
doaj +2 more sources
Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors
Indium oxide (In2O3)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide
Rita Firmino +7 more
doaj +1 more source

