Results 41 to 50 of about 7,647 (298)
High-temperature oxidation and erosion-resistant refractory coatings [PDF]
, 1970 Various refractory coating systems were evaluated for rocket nozzle applications by actual rocket test firings. A reference is noted which identifies failure mechanisms and gives results of the firing tests for 18 coating systems.
Peterson, D. A., Winter, J. M.
core +1 more source
Artificial Amorphous Interface Matters for Boosting High‐Voltage Stable LiCoO2 Cathode
Advanced Functional Materials, EarlyView.The amorphization of phosphate‐based surface layer with favorable Li‐ion conducting kinetics is realized by precisely tailored atomic‐level fabrication. This amorphous coating enables the lithium cobalt oxide (LCO) cathode superior high‐voltage rate capability and cycling performance, owing to the fast interfacial ionic transport and maintained ...
Jinjin Ma +10 more
wiley +1 more source
Methods of repairing a substrate [PDF]
, 2011 A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting ...
Easler, Timothy E., Riedell, James A.
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A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film
IEEE Journal of the Electron Devices Society, 2017 A ferroelectric thin film transistor (Fe-TFT) based on annealing-free hafnium zirconium oxide (HfZrO) is demonstrated in this paper. Indium zinc oxide was used as channel semiconductor. The as-deposited 30-nm HfZrO film implemented as gate dielectric was
Yuxing Li +11 more
doaj +1 more source
Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM
IEEE Journal of the Electron Devices Society, 2023 We have previously studied fatigue and its recovery phenomenon on 64 kbits hafnium-based one-transistor and one-capacitor (1T1C) ferroelectric random-access memory (FeRAM) with PVD-TiN (30 nm)/ALD- Hf0.5Zr0.5O2 (8 nm)/CVD-TiN (50 nm) capacitors.
Jun Okuno +10 more
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Advanced Functional Materials, EarlyView.Permanent magnets derive their extraordinary strength from deep, universal electronic‐structure principles that control magnetization, anisotropy, and intrinsic performance. This work uncovers those governing rules, examines modern modeling and AI‐driven discovery methods, identifies critical bottlenecks, and reveals electronic fingerprints shared ...
Prashant Singh
wiley +1 more source
Advanced Electronic MaterialsBiaxial stress is identified to play an important role in the polar orthorhombic phase stability in hafnium oxide‐based ferroelectric thin films. However, the stress state during various stages of wake‐up has not yet been quantified.
Samantha T. Jaszewski +10 more
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Absorbed dose assessment in particle-beam irradiated metal-oxide and metal-nonmetal memristors [PDF]
Nuclear Technology and Radiation Protection, 2012 Absorbed dose was estimated after Monte Carlo simulation of proton and ion beam irradiation on metal-oxide and metal-nonmetal memristors. A memristive device comprises two electrodes, each of a nanoscale width, and a double-layer active region ...
Knežević Ivan D. +3 more
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Advanced Functional Materials, EarlyView.Materials exist that are useful for gamma scintillation, radiation shielding, neutron‐gamma pulse shape discrimination (PSD), thermal neutron detection, or high refractive index applications. While certain materials have exhibited optimal performance for each of these applications, none achieve multiple functions.
Isabelle Winardi +13 more
wiley +1 more source
Obtaining Iron (III) – Containing Triple Molybdate K5FeZr(MoO4)6 by Sol-Gel Technology
Конденсированные среды и межфазные границы, 2020 Oxide compounds, as the basis of promising materials, are used in various fields of modern technologies due to their electrical and optical properties.
Aleksandra V. Logvinova +2 more
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