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GaN HEMT modeling for power and RF applications using ASM-HEMT
2016 3rd International Conference on Emerging Electronics (ICEE), 2016In this paper, we aim to present an overview of a surface-potential (SP) based model named “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. This model is presently under consideration in the phase-III of industry standardization by the Compact Model Coalition (CMC).
Sudip Ghosh +4 more
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2011
A review of nitride-based HEMT technology, beginning with substrate considerations and moving to crystal growth, device processing, packaging, and finally to products. The final section introduces important areas anticipated for future GaN HEMT development: InAlN HEMTs, GaN-on-diamond, and heterointegration.
Wayne Johnson, Edwin L. Piner
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A review of nitride-based HEMT technology, beginning with substrate considerations and moving to crystal growth, device processing, packaging, and finally to products. The final section introduces important areas anticipated for future GaN HEMT development: InAlN HEMTs, GaN-on-diamond, and heterointegration.
Wayne Johnson, Edwin L. Piner
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DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT
2015 4th International Conference on Electrical Engineering (ICEE), 2015In this paper, Al2O3 AlGaN/GaN MOS-HEMTs and HEMTs grown on Silicon substrate were successfully simulated. DC and RF characteristics were extracted. The AlGaN/GaN HEMT suffers from high leakage current. In order to solve this problem, a dielectric Al2O3 gate was applied to the device to suppress the high gate leakage current.
Zine-eddine Touati +2 more
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IEE Colloquium on Advanced Developments in Microelectronic Engineering, 1996
This presentation is concerned with devices and circuits based on GaAs substrates. MESFETs, HEMTs and pseudomorphic HEMTs are promising candidates for large scale integration at very high frequencies of operation. (5 pages)
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This presentation is concerned with devices and circuits based on GaAs substrates. MESFETs, HEMTs and pseudomorphic HEMTs are promising candidates for large scale integration at very high frequencies of operation. (5 pages)
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High frequency GaN HEMT Modeling with ASM-HEMT
2022 17th European Microwave Integrated Circuits Conference (EuMIC), 2022R. Sommet +3 more
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AlGaN/GaN microwave power HEMT's
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369), 2003High average microwave power output density has been observed with AlGaN/GaN HEMT's grown on sapphire substrates, reaching 4.0 W/mm with 49% power-added efficiency for single gates, and 1.8 W/mm with 78% power-added efficiency for multiple gates. Using SiC substrates, an order of magnitude more heat can be removed.
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Millimeter-wave HEMT technology
IEEE Military Communications Conference, 'Bridging the Gap. Interoperability, Survivability, Security', 2003The authors report the development of short gate-length (0.15-0.25- mu m) HEMTs (high-electron-mobility transistors) with state-of-the-art noise and power performance. The three families of HEMTs-conventional GaAs/AlGaAs, pseudomorphic, and InP-based-are described and compared. The InP HEMTs offer the lowest noise figure: device noise figures of 0.3 dB
A.W. Swanson +4 more
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Field Effect TransistorsFETs and HEMTs
2000Abstract This chapter discusses the principles of operation and applications of field effect transistors. Field effect transistors, specifically high electron mobility transistors (HEMTs) or modulation-doped field-effect transistors are being extensively used in low noise and power amplifiers at microwave and millimeter-wave frequencies.
Prashant Chavarkar, Umesh Mishra
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