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Surface and Coatings Technology, 2017 In this work, Al-Mg-Ti-B coatings were synthesized at room temperature via high power impulse magnetron sputtering (HIPIMS). The as-deposited Al-Mg-Ti-B coatings exhibited a dense and X-ray amorphous microstructure.
Jun Ouyang, Yun Tian
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Impact of self-sputtering in high power impulse magnetron sputtering (HiPIMS) with helium
Journal of Applied Physics, 2023Conventional magnetron discharge is a widely used technology for many applications. In the last decade, the high current density sputtering regime has been an interesting alternative for tailoring thin film properties. In this paper, we focused on the electrical characterization of the helium magnetron plasma operated at average gas pressure (5 Pa ...
Erwan Morel +3 more
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Pattern Formation in High Power Impulse Magnetron Sputtering (HiPIMS) Plasmas
Plasma Chemistry and Plasma Processing, 2019High power impulse magnetron sputtering (HiPIMS) plasmas produce a very energetic growth flux for the synthesis of thin films with superior properties. High power densities in the range of a few $$\hbox {kW}/\hbox {cm}^2$$ are applied to a metal target electrode in short pulses with a length of 10–$$400\,\upmu \hbox {s}$$ and duty cycles of a few ...
Julian Held, Achim von Keudell
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2020 7th International Congress on Energy Fluxes and Radiation Effects (EFRE), 2020
The effects of using of the HIPIMS technology for deposition of coatings for various purposes, including CrB, TiAlNiC, and MoHfSiB, are studied. Ceramic targets obtained by self-propagating high-temperature synthesis were used for sputtering. It is shown that the transition from DC to HIPIMS modes increases the structure density, hardness, elastic ...
Philipp Kiryukhantsev-Korneev +1 more
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The effects of using of the HIPIMS technology for deposition of coatings for various purposes, including CrB, TiAlNiC, and MoHfSiB, are studied. Ceramic targets obtained by self-propagating high-temperature synthesis were used for sputtering. It is shown that the transition from DC to HIPIMS modes increases the structure density, hardness, elastic ...
Philipp Kiryukhantsev-Korneev +1 more
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E. coli Inactivation by High-Power Impulse Magnetron Sputtered (HIPIMS) Cu Surfaces
The Journal of Physical Chemistry C, 2011This study reports HIPIMS-sputtered samples of Cu-particulate films with currents at 6 and 60 amps leading to E. coil inactivation. The Cu coverage and nanoparticle structure of the fibers is reported by TEM. Evidence is presented of redox processes in the Cu taking place during E.
Kusiak-Nejman, E. +8 more
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2013 Abstracts IEEE International Conference on Plasma Science (ICOPS), 2013
Summary form only given. HiPIMS discharges are able to produce a high density plasma (peak electron density 1018 - 1020 m-3) by applying large voltages to a target. Electrons are effectively magnetized by a strong magnetic field (100 mT), and exhibit an E x B drift in the azimuthal direction in the plane of the target.
Sara Gallian +3 more
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Summary form only given. HiPIMS discharges are able to produce a high density plasma (peak electron density 1018 - 1020 m-3) by applying large voltages to a target. Electrons are effectively magnetized by a strong magnetic field (100 mT), and exhibit an E x B drift in the azimuthal direction in the plane of the target.
Sara Gallian +3 more
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Optical emission spectroscopy of High Power Impulse Magnetron Sputtering (HiPIMS) of CIGS thin films
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014CuIn 1−x Ga x Se 2 (CIGS) thin films with x = 0, 0.28 and 1 were prepared by the sputtering of Cu, In and Ga in HiPIMS (High Power Impulse Magnetron Sputtering) or DC magnetron and subsequently selenized in an Ar+Se atmosphere. Optical emission spectroscopy (OES) was used to monitor differences in HiPIMS and DC plasma during sputtering of metallic ...
Jiri Olejnicek +8 more
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Journal of Physics D: Applied Physics, 2013
ZnO films have been reactively deposited on sapphire substrates at 300 °C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (∼5 × 1018 cm−3) and a Hall mobility of 8.0 cm2 V−1
J G Partridge +4 more
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ZnO films have been reactively deposited on sapphire substrates at 300 °C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (∼5 × 1018 cm−3) and a Hall mobility of 8.0 cm2 V−1
J G Partridge +4 more
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