Results 151 to 160 of about 8,906 (184)

Gap-fill type HSQ/ZEP520A bilayer resist process-(IV): HSQ-rod and HSQ-tip hardening processes

SPIE Proceedings, 2010
HSQ island formed by directly e-beam exposure (DE) and wet development is used as a dry etching mask material. However, the HSQ islands with high aspect ratio are susceptible to collapse during wet development process due to surface tension. To improve this, HSQ-rod and HSQ-Tip structures were achieved by dry stripping of ZEP520A after thermal ...
Wei-Su Chen, Ming-Jinn Tsai
  +4 more sources

Gap-fill type HSQ/ZEP520A bilayer resist process-(II): HSQ island and spacer formation

SPIE Proceedings, 2008
Hydrogen silsesquioxane (HSQ) bilayer resist (BLR) processes are attractive to obtain nano-sized features with high aspect ratio by dry-transferring thin e-beam pattern to thick underlayer to strengthen the etch resistance. However, there are drawbacks of high e-beam dosage for HSQ patterning and difficulty in controlling the underlayer resist profile
Wei-Su Chen, Pei-Yi Gu, Ming-Jer Kao, Ming-Jinn Tsai   +3 more
openaire   +1 more source

HSQ resist for replication stamp in polymers

SPIE Proceedings, 2012
We investigated an affordable, accurate and large scale production method to fabricate sub-wavelength grating structures by replication in polycarbonate substrates by hot embossing. We used hydrogen silsesquioxane (HSQ) a high resolution, binary, inorganic, negative electron beam resist, on silicon substrate to make a stamp for replication.
Saleem, M.R., Stenberg, P.A., Khan, M.B., Khan, Z.M., Honkanen, S., Turunen, J.   +6 more
openaire   +3 more sources

Influence of temperature on HSQ electron-beam lithography

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2007
The authors present a study of the influence of temperature on hydrogen silsesquioxane (HSQ) e-beam lithography during drying, developing, and postdevelopment baking. In accordance with the observation that tempering at relatively low temperatures can already lead to noticeable cross-linking, comparable to the effect of e-beam exposure, the authors ...
M. Häffner, A. Haug, A. Heeren, M. Fleischer, H. Peisert, T. Chassé, D. P. Kern   +6 more
openaire   +1 more source

Room Temperature Nanoimprint Technology Using Hydrogen Silsequioxane (HSQ)

Japanese Journal of Applied Physics, 2002
Room-temperature nanoimprint lithography (RT-NIL) technology has been developed to overcome critical dimensions and pattern placement error due to thermal expansion in the conventional nanoimprint lithography (NIL) process. We propose RT-NIL using hydrogen silsequioxane (HSQ) instead of PMMA used in conventional NIL, and demonstrate HSQ replicated ...
Yutaka Igaku, Shinji Matsui, Hiroyuki Ishigaki, Jun-ichi Fujita, Masahiko Ishida, Yukinori Ochiai, Hideo Namatsu, Masanori Komuro, Hiroshi Hiroshima   +8 more
openaire   +1 more source

Resistance Switching in Individual Hydrogen Silsesquioxane (HSQ) Nanopillars

ECS Meeting Abstracts, 2016
We demonstrate resistance switching in individual 100nm-diameter hydrogen silsesquioxane (HSQ) nanopillars. HSQ is commonly used as an insulating material and an electron beam resist in the electronics industry, as it forms silicon oxide upon exposure to an electron beam. In this paper, we present our recent work on resistance switching in HSQ.
Wing Hung Ng, Mark Buckwell, Adnan Mehonic, Anthony Joseph Kenyon   +3 more
openaire   +1 more source

Enhancing the electron beam sensitivity of hydrogen silsesquioxane (HSQ)

SPIE Proceedings, 2004
The electron beam sensitivity of hydrogen silsesquioxane (HSQ) has been enhanced by including sensitizers that decompose to generate nucleophiles which catalyze the conversion of the silicon hydride (Si-H) moieties in HSQ into the insoluble siloxane (Si-O-Si) network.
Augustin Jeyakumar, Clifford L. Henderson   +1 more
openaire   +1 more source

HSQ hybrid lithography for 20 nm CMOS devices development

Microelectronic Engineering, 2002
This paper reports the lithographic development on 8 in. silicon wafers for 20 nm CMOS devices using a hydrogen silsesquioxane (HSQ) hybrid lithography process. The method relies on splitting the pattern into high-resolution and low-resolution components at the same level.
Mollard, L., Cunge, G., Tedesco, S., Dalzotto, B., Foucher, J.   +4 more
openaire   +2 more sources

Study of process of HSQ in electron beam lithography

2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, 2010
As a kind of inorganic negative-tone resist in electron beam lithography, hydrogen silsesquioxane(HSQ) has a high pattern resolution of about 5 nm, but the poor sensitivity limits its extensive application in the field of micro-fabrication. It's very difficult to fabricate the high aspect-ratio dense resist pattern for HSQ because of backscattering ...
null Zhao Min, null Chen Baoqin, null Xie Changqing, null Liu Ming, null Nie Jiebing   +4 more
openaire   +1 more source