Dirac-source diode with sub-unity ideality factor [PDF]
Nature Communications, 2022 While different types of low-power transistors have been investigated, low voltage rectifiers able to overcome the thermionic limit have not been proposed yet.
Gyuho Myeong +13 more
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Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor [PDF]
Nanomaterials, 2023 It is essential to understand the barrier height, ideality factor, and role of inhomogeneities at the metal/semiconductor interfaces in nanowires for the development of next generation nanoscale devices.
Siva Pratap Reddy Mallem +6 more
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Optical and temperature dependent electrical properties of Er-/Yb-doped ZnO schottky diodes and thin films [PDF]
Scientific ReportsThe study reports the fabrication of undoped and Er-/Yb-doped ZnO thin films using the sol-gel spin coating technique. The structural and optical properties of the films were analyzed using X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy.
Dechasa Tolera +2 more
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Effect of Metal on Characteristics of MPc Organic Diodes [PDF]
Журнал нано- та електронної фізики, 2014 The fabrication and electrical characterization of metal phthalocyanine MPc organic diodes have been investigated. The Au / MPc / Si Schottky diodes are fabricated via a spin coating route.
M. Benhaliliba, Y.S. Ocak, C.E. Benouis
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Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
IEEE Journal of the Electron Devices Society, 2019 An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport.
Qin Zhou +11 more
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Thermionic emission conduction in Mo AlGaN/GaN diodes in the presence of Schottky barrier inhomogeneities [PDF]
Scientific ReportsWide bandgap semiconductors for high-power and high-frequency applications drain a lot of scientific interest. Among them AlGaN/GaN heterostructure with its related 2D electron gas is a key element for advanced microelectronics devices.
S. Milazzo +4 more
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A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon [PDF]
Журнал нано- та електронної фізики, 2011 The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier
B.P. Modi
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Extracting the inherent ideality factor of a diode from electrical current–voltage characteristics
Electronics Letters, 2023 The ideality factor of a diode gives the information on the current conduction or recombination processes occurring inside the device. The ideality factor obtained from the electrical current–voltage (I–V) characteristics by the conventional method is ...
Jaehyeok Park +4 more
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In-nSiC schottky photodiode ; Fabrication and Study [PDF]
Engineering and Technology Journal, 2008 In the present work , schottky photodiode have been mode on n-type SiCby depositing of thin layer of In . electrical characteristics included I-V(dark and illumination ) have been investigated .
Khalid Z. Yahiya +2 more
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Hot-Carriers’ Effect on the Performance of Organic Schottky Diodes
IEEE Access, 2020 Because thermionic emission or tunneling occurs when carriers overcome or tunneling through the barrier for any Schottky diode, hot carriers caused by the applied electric field can enhance carrier thermionic emission or carrier tunneling.
Ling-Feng Mao
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