Results 21 to 30 of about 30,364 (194)

The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment [PDF]

open access: yes, 2020
Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated
Baker, G. W. C.   +15 more
core   +1 more source

The Opto-Electronic Characteristics of Multi-Porosity Silicon System [PDF]

open access: yesEngineering and Technology Journal, 2014
Photo-electrochemical etching with step- gradient illumination intensity was used to generate multi – porosity silicon quantum wire system (Q.W.Si) on n-type silicon wafer. A nano size photonic device of AL/Q.W.Si /si/AL was fabricated to investigate the
Alwan M.Alwan
doaj   +1 more source

Fundamental Understanding of Dye Coverage and Performance in Dye-Sensitized Solar Cells Using Copper Electrolyte

open access: yesEnergies, 2023
Dyes have played a pivotal role in the advancement of modern dye-sensitized solar cells (DSCs), as they not only facilitate light harvesting, but also serve as blocking layers to impede recombination.
Sourava Chandra Pradhan   +3 more
doaj   +1 more source

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor. [PDF]

open access: yesPLoS ONE, 2016
Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures.
Hassan Maktuff Jaber Al-Ta'ii   +2 more
doaj   +1 more source

Wavelength-independent coupler from fiber to an on-chip cavity, demonstrated over an 850nm span [PDF]

open access: yes, 2007
A robust wide band (850 nm) fiber coupler to a whispering-gallery cavity with ultra-high quality factor is experimentally demonstrated. The device trades off ideality for broad-band, efficient input coupling.
Carmon, Tal   +3 more
core   +1 more source

Unique factorization of ideals into nonfactorable ideals [PDF]

open access: yesProceedings of the American Mathematical Society, 1964
The purpose of this note is to prove a theorem which shows a connection between the definition of a prime ideal in classical algebraic number theory and the usual definition of a prime ideal. A proper ideal in an integral domain with unit element is an ideal different from the unit ideal and the zero ideal.
openaire   +2 more sources

Factoring ideals in Prüfer domains

open access: yesJournal of Pure and Applied Algebra, 2007
We show that in certain Pr fer domains, each nonzero ideal $I$ can be factored as $I=I^v $, where $I^v$ is the divisorial closure of $I$ and $ $ is a product of maximal ideals. This is always possible when the Pr fer domain is $h$-local, and in this case such factorizations have certain uniqueness properties. This leads to new characterizations of
FONTANA, Marco   +2 more
openaire   +3 more sources

Modelling, iterative procedure and simulation results for a monocrystalline solar cell [PDF]

open access: yes, 2012
This paper focuses on the modelling and simulation for a photovoltaic system formed by monocrystalline solar modules. The objective is to find the parameters of the nonlinear I-V equation by adjusting the curve at three points: open circuit, maximum ...
Melício, Rui
core   +1 more source

Ideals as generalized prime ideal factorization of submodules

open access: yes, 2023
For a submodule $N$ of an $R$-module $M$, a unique product of prime ideals in $R$ is assigned, which is called the generalized prime ideal factorization of $N$ in $M$, and denoted as ${\mathcal{P}}_M(N)$. But for a product of prime ideals ${{\mathfrak{p}_1} \cdots {\mathfrak{p}_{n}}}$ in $R$ and an $R$-module $M$, there may not exist a submodule $N$ in
Thulasi, K. R.   +2 more
openaire   +3 more sources

A study of temperature-related non-linearity at the metal-silicon interface [PDF]

open access: yes, 2012
In this paper, we investigate the temperature dependencies of metal-semiconductor interfaces in an effort to better reproduce the current-voltage-temperature (IVT) characteristics of any Schottky diode, regardless of homogeneity.
A. Pérez-Tomás   +11 more
core   +1 more source

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