Results 51 to 60 of about 30,364 (194)
, 2018 In this paper, we develop an analytic physics-based model to describe current conduction in ultra-thin black phosphorus (BP) field-effect transistors (FETs). The model extends the concept of virtual source charge calculation to capture the effect of both
Haratipour, Nazila +3 more
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Strong magnetic field effect on above-barrier transport in Pb-p-HgCdTe Schottky barriers [PDF]
, 2012 Due to large difference in effective masses of light and heavy holes it is usually supposed that the above-barrier current in Schottky barriers on p-type semiconductor is controlled only by the heavy holes.
Radantsev, V. F., Zavyalov, V. V.
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Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN [PDF]
, 2011 We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements.
Nanda, Kumar Reddy N. +1 more
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The electrical properties of Au/GaN and PEDOT: PSS/GaN diodes
International Journal of Energetica, 2020 In the present paper, using a numerical simulator, the simulation of Au/n-GaN and PEDOT: PSS/GaN structures were performed in a temperature at room temperature.
Ali Sadoun +3 more
doaj
International Journal of Photoenergy, 2016 Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor (MOS) structure.
Şadan Özden, Cem Tozlu, Osman Pakma
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Sensors, 2015 Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials,
Hassan Maktuff Jaber Al-Ta'ii +2 more
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Staggered heterojunction Pentacene/ZnO based organic–inorganic flexible photodetector
Results in Optics, 2023 This article describes the performance analysis of the fabricated visible photodetector based on the Pd/pentacene/ZnO/ITO/PET structure. Hydrothermal and thermal vacuum deposition techniques deposited the ZnO and pentacene films, and FESEM images ...
Mowj R. Sabity, Ghusoon M. Ali
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, 2007 We describe here the characteristics of two types of high-quality PbTe p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ).
A. V. Butenko +12 more
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Temperature impact on parameters of In0.3Ga0.7As PV cell under laser irradiation condition
AIP Advances, 2019 The parameters of In0.3Ga0.7As PV cell applied in laser wireless power transmission (LWPT) system dependence on temperature was investigated at a temperature range of 5-90°C under 100mW/cm2 laser intensity with 1070nm wavelength.
Guangji Li +3 more
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Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser
, 2011 Efficient, low threshold, and compact semiconductor laser sources are being investigated for many applications in high-speed communications, information processing, and optical interconnects.
Ellis, Bryan +6 more
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