Results 71 to 80 of about 30,364 (194)
INSERTION-OF-IDEAL-FACTORS-PROPERTY
East Asian mathematical journal, 2014 Abstract. Due to Bell, a ring R is usually said to be IFP if ab = 0implies aRb = 0 for a;b 2R. It is shown that if f(x)g(x) = 0 for f(x) =a 0 +a 1 x and g(x) = b 0 + +b n x n in R[x], then (f(x)R[x]) 2n+2 g(x) = 0.Motivated by this results, we study the structure of the IFP when properideals are taken in place of R, introducing the concept of insertion-
Sang Ha Baek +12 more
openaire +2 more sources
Modeling photoconversion efficiency of perovskite solar cells
, 2017 A theoretical approach to photoconversion efficiency modeling in perovskite p-i-n structures is developed. The results of this modeling compare favorably with the experiment and indicate that the surfaces of the perovskite solar cells (SCs) are naturally
Brown, André EX +11 more
core +3 more sources
Factorization of complete ideals
Journal of Algebra, 1988 Zariski developed a theory of complete ideals for two-dimensional regular local rings. He proved that in such rings there is unique factorization of complete ideals [\textit{O. Zariski}, Am. J. Math. 60, 151-204 (1938; Zbl 0018.20101); \textit{O. Zariski} and \textit{P. Samuel}, ``Commutative algebra'', Vol. 2 (Princeton 1960; Zbl 0121.278); appendix 5]
openaire +1 more source
IEEE Journal of the Electron Devices SocietyGate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in ...
Tae Yoon Lee +3 more
doaj +1 more source
A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application. [PDF]
Nanomaterials (Basel), 2021 Kaufmann IR +5 more
europepmc +1 more source
EnergiesAn algorithm has been implemented and it is provided in this article as an executable program to extract the five solar cell parameters within the one-diode solar cell model.
Victor-Tapio Rangel-Kuoppa
doaj +1 more source
Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes
Modern Electronic Materials, 2017 The effects of changing the acceptors concentration on the electrical characteristics of Au/Ti on Be-doped Al0.29Ga0.71As Schottky contact have been investigated in the temperature range of 100–400 K.
Noorah A. Al-Ahmadi +4 more
doaj +1 more source
Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells
, 2009 The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region.
El-Emawy, Mohamed A. +4 more
core +1 more source
U-ideals of factorable operators [PDF]
Czechoslovak Mathematical Journal, 1999 zbMATH Open Web Interface contents unavailable due to conflicting licenses.
openaire +2 more sources
Solar cells in bulk InP using an open tube diffusion process [PDF]
A simple open tube diffusion technique for the fabrication of n+p junction solar cells is described. Large area (greater than 0.25 square cm) solar cells have been made by this process with a photovoltaic conversion efficiency of 15.2 percent under ...
Borrego, J. M. +3 more
core +1 more source