Results 81 to 90 of about 30,364 (194)

Why polymer chains in a melt are not random walks

open access: yes, 2007
A cornerstone of modern polymer physics is the `Flory ideality hypothesis' which states that a chain in a polymer melt adopts `ideal' random-walk-like conformations.
A Johner   +15 more
core   +2 more sources

Valuation Ideal Factorization Domains

open access: yes
An integral domain $D$ is a valuation ideal factorization domain (VIFD) if each nonzero principal ideal of $D$ can be written as a finite product of valuation ideals. Clearly, $π$-domains are VIFDs. In this paper, we study the ring-theoretic properties of VIFDs and the $*$-operation analogs of VIFDs. Among them, we show that if $D$ is treed (resp., $*$-
Chang, Gyu Whan, Reinhart, Andreas
openaire   +2 more sources

Rectification Behavior Evaluation of Si Cone Diodes in Dependence of Contact Metallization and Printable Nanoparticle Thin Film Modification

open access: yesIEEE Access
Recently, we were able to demonstrate Si cone Schottky diodes processed from printable nanoparticle dispersion which can operate at switching speeds well beyond 4 GHz.
Fabian Langer, Niels Benson
doaj   +1 more source

Generalized comaximal factorization of ideals

open access: yesJournal of Algebra, 2012
Let \(R\) be a commutative ring with nonzero identity. A comaximal factorization of a proper ideal \(I\) of \(R\) is a product \(I = I_1 \cdots I_n\) of proper ideals \(I_1, \ldots, I_n\) of \(R\) with \(I_i + I_j = R\) for \(i \neq j\). Early work on comaximal factorizations goes back to E. Noether.
openaire   +1 more source

Analysis of fill factor losses in thin film CdS/CdTe photovoltaic devices

open access: yesMoldavian Journal of the Physical Sciences, 2010
In this paper, CdS/CdTe solar cells with conversion efficiency values of η = 5.1, 3.6, 3.5, and 2.9% are analyzed and the effects of the device parameters, such as the diode ideality factor (n), the saturation current-density (Jo), and the series ...
Potlog, Tamara   +6 more
doaj  

Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications [PDF]

open access: yesЖурнал нано- та електронної фізики, 2011
In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN.
Ashish Kumar, Seema Vinayak, R. Singh
doaj  

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

open access: yesApplied Physics Express
This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor ( η ) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown ...
Dinusha Herath Mudiyanselage   +4 more
doaj   +1 more source

Investigation into charge carrier dynamics in organic light-emitting diodes

open access: yesNano Research Energy
Organic light-emitting diodes (OLEDs) have demonstrated remarkable advancements in both device lifetime and luminous efficiency. However, insufficient operation lifetime due to device degradation remains a major hurdle, especially for brighter devices ...
Dong-Guang Zheng   +8 more
doaj   +1 more source

Automatic Algorithm Based on Simpson Seventh-Order Integration of Current Minus Short-Circuit Current: Extracting Photovoltaic Device Parameters Within One-Diode Model

open access: yesAlgorithms
Simpson’s seventh-order integration has been implemented in an automatically executable program to integrate the current minus the short-circuit current.
Victor-Tapio Rangel-Kuoppa
doaj   +1 more source

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