Results 1 to 10 of about 2,095 (148)

Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor [PDF]

open access: yesMicromachines
This paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages.
Kuan-Min Kang   +2 more
doaj   +2 more sources

Modelling and simulation of sinusoidal pulse width modulation controller for solar photovoltaic inverter to minimize the switching losses and improving the system efficiency [PDF]

open access: yesArchives of Electrical Engineering, 2022
With the extinction of fossil fuels and high increase in power demand, the necessity for renewable energy power generation has increased globally. Solar PV is one such renewable energy power generation, widely used these days in the power sector.
Sivaraj Panneerselvam   +2 more
doaj   +1 more source

Research on Residual Life of IGBT Module on EMU in Advanced Repair Based on Power Cycles

open access: yesKongzhi Yu Xinxi Jishu, 2023
The insulated gate bipolar transistor (IGBT) module is one of the weakest links in the traction converter system. Accurate life and reliability assessment of the IGBT module is particularly important for safe operation of the traction converter system ...
JIANG Jie, LI Nan
doaj   +3 more sources

A review of the cooling methods based on IGBT module and the application of micro-channel cooling in IGBT

open access: yesXi'an Gongcheng Daxue xuebao, 2023
The thermal management problem of IGBT is becoming more and more prominent, and it is urgent to develop a new cooling technology with high efficiency, stability and flexibility.
WU Xilei   +6 more
doaj   +1 more source

Deep learning network based lifetime analysis of energy - fed traction power supply converter [PDF]

open access: yesMATEC Web of Conferences, 2022
This paper presents a life prediction method based on the parameters of the actual operation history data collected by the existing converter power unit sensors.
Li Zeshu, Xia Mingchao, Chen Qifang
doaj   +1 more source

Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT

open access: yesIET Circuits, Devices and Systems, 2021
This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin   +6 more
doaj   +1 more source

Development of a boost-inverter converter under electromagnetic compatibility stress equipping a photovoltaic generator

open access: yesElectrical engineering & Electromechanics, 2023
Introduction. Static converters are among the most widely used equipment in several applications, for example, electric power transmission, motor speed variation, photovoltaic panels, which constitute the electronic components.
S. Bechekir   +5 more
doaj   +1 more source

Experimental Modeling of Forward Recovery Characteristics of IGBT for DC Circuit Breaker

open access: yesZhongguo dianli, 2021
DC circuit breaker is the main means to clear the faults in VSC-HVDC power grid. Before action of the hybrid DC circuit breaker, the IGBT in the transfer branch is in a state of zero voltage and zero current.
Hong SHEN   +4 more
doaj   +1 more source

ESTIMATION OF LOSSES IN THE MULTI-PHASE FREQUENCY CONVERTERS FOR ELECTRIC GROUND TRACTION SYSTEM OF AIRCRAFT

open access: yesИзвестия высших учебных заведений: Проблемы энергетики, 2017
Improving the energy efficiency of vehicles is an essential feature of scientific and technical progress. One means of increasing the energy efficiency of transport is the introduction of electric drive with multiphase induction motors.
A. G. Logacheva   +2 more
doaj   +1 more source

A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer

open access: yesMicromachines, 2023
A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large ...
Zhigang Wang, Chong Yang, Xiaobing Huang
doaj   +1 more source

Home - About - Disclaimer - Privacy